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On the formation of voids, etched holes, and GaO particles configuration during the nanowires growth by VLS method on GaAs substrate

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Abstract

The nanowires grown on GaAs semiconductor substrate play very important roles in nanoelectronics, optoelectronics, and sensors. The nanowires can be produced by many methods among the existing methods of nanowires growth on GaAs semiconductor, the vapor–liquid–solid (VLS) method appears to be simple, low cost, and popular. However, this method in practice requires further investigations concerning the growth mechanisms, size effects, and the role of Au catalyst metal diffusion, as well as the effect of technological conditions. Several undesired phenomena, which strongly influence the morphologies, features, and applications of the grown nanowires, can occur as the result of using thick Au catalyst layers, high growth temperatures, and/or small vapor volume in the closed ampoule. This paper aims to examine simultaneous formation of voids, etched holes, and GaO particles along with the nanowires grown by VLS method on GaAs substrate. As the result, typical technological conditions for the nanowires growth with better characterizations are proposed.

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Acknowledgments

The Authors would like to express their thanks to the NAFOSTED for funding the basic research project (103.02-2010.40) during 2011–2012 to carry out this study. This work is carried out at the Key Lab of electronic materials and devices in IMS-VAST.

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Authors and Affiliations

  1. Institute of Materials Science (IMS), 18 Hoang Quoc Viet Road, Cau Giay, Hanoi, Vietnam

    Khac An Dao, Anh Tuan Phan & Hung Manh Do

  2. Department of Advanced Materials Engineering, Chungnam National University, Daejeon, South Korea

    Tien Dai Nguyen

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  1. Khac An Dao
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  2. Tien Dai Nguyen
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Correspondence to Khac An Dao.

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Dao, K.A., Nguyen, T.D., Phan, A.T. et al. On the formation of voids, etched holes, and GaO particles configuration during the nanowires growth by VLS method on GaAs substrate. J Mater Sci: Mater Electron 24, 2513–2520 (2013). https://doi.org/10.1007/s10854-013-1126-1

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  • DOI: https://doi.org/10.1007/s10854-013-1126-1

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