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Ag nanoparticle catalyst based on Ga2O3/GaAs semiconductor nanowire growth by VLS method

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Abstract

In this paper, we report the synthesis results of Ga2O3 semiconductor nanowires (NWs) on GaAs (100) semi-insulator substrate by vapor liquid solid (VLS) method. Our study based on Ag nanoparticle (AgNP) catalyst, in which prepared by conventional sol–gel method. As the GaAs wafer, after being deposited an AgNP layer in HF/AgNO3 aqueous solution, which dried and loaded to vacuum-chamber. GaAs slices heated in vacuum-furnace by VLS method with two temperature modes. The results showed that the Ga2O3 NW morphologies and properties depend strongly on technological conditions, such as AgNP catalyst concentration, growth temperature, and vapor pressure. It is also indicated that the NW random grown over large area with the diameter in the region conform from 18 to 30 nm scale and lengths ranging from several tens of nm to a few hundred micrometers.

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Acknowledgments

The authors wish to acknowledge the support of the National Foundation for Science and Technology Development (NAFOSTED) for funding the basic research Project 103.02-2013.14 in 2013–2015 period and the Agency for Defense Development (ADD) of Republic of Korea and was partially supported by Mid-career Researcher Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (No. 2011-0029412).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Chungnam National University, Daejeon, 305-764, South Korea

    Tien Dai Nguyen & Eui Tae Kim

  2. Institute of Materials Science (IMS), Vietnam Academy of Science and Technology (VAST), Hanoi, Vietnam

    Khac An Dao

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  1. Tien Dai Nguyen
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  2. Eui Tae Kim
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  3. Khac An Dao
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Correspondence to Tien Dai Nguyen.

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Nguyen, T., Kim, E. & Dao, K. Ag nanoparticle catalyst based on Ga2O3/GaAs semiconductor nanowire growth by VLS method. J Mater Sci: Mater Electron 26, 8747–8752 (2015). https://doi.org/10.1007/s10854-015-3552-8

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  • DOI: https://doi.org/10.1007/s10854-015-3552-8

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