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Dielectric relaxation in complex perovskite Ba(Bi1/2Ta1/2)O3

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Abstract

A new lead-free perovskite Ba(Bi1/2Ta1/2)O3 was prepared by conventional ceramic fabrication technique at 1,200 °C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (T CC  < 4%) up to +125 °C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi1/2Ta1/2)O3.

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Acknowledgments

The authors acknowledge the financial support provided by the Armament Research and Establishment Board, DRDO New Delhi (Ref. No.: ARMREB/ASE/2008/87).

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Authors and Affiliations

  1. University Department of Physics, T. M. Bhagalpur University, Bhagalpur, 812007, India

    Amodini Mishra, S. N. Choudhary & Kamal Prasad

  2. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, 721302, India

    R. N. P. Choudhary

  3. Department of Physics, Indian Institute of Technology, Chennai, 600036, India

    V. R. K. Murthy

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  1. Amodini Mishra
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  2. S. N. Choudhary
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  3. R. N. P. Choudhary
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  5. Kamal Prasad
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Correspondence to Kamal Prasad.

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Mishra, A., Choudhary, S.N., Choudhary, R.N.P. et al. Dielectric relaxation in complex perovskite Ba(Bi1/2Ta1/2)O3 . J Mater Sci: Mater Electron 23, 185–192 (2012). https://doi.org/10.1007/s10854-011-0380-3

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