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Electrical properties of pulsed laser deposited Bi2Zn2/3Nb4/3O7 thin films for high K gate dielectric application

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Abstract

Metal Insulator Semiconductor (MIS) capacitors with monoclinic bismuth zinc niobate pyrocholre having the composition Bi2Zn2/3Nb4/3O7 (m-BZN) dielectric layer were fabricated and characterized. Capacitance voltage (C–V) and current voltage measurements were utilized to obtain the dielectric properties, leakage current density and interface quality. The results shows that the obtained m-BZN thin films presents a high dielectric constant in between 30 and 70, a good interface quality with silicon and a leakage current density of 10 μA/cm2 for a field strength of 100 kV/cm which is acceptable for high performance logic circuits. The equilent oxide thickness for the films annealed at 200 °C was 10 nm. These results suggest that m-BZN thin films can be potentially integrated as gate dielectric materials in CMOS technology.

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Acknowledgments

K.S acknowledge FCT Portugal (SFRH/BPD/66918/2009) and CSIR India (DSRF09/414(0768)/2008-EMR-I) for support.

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Authors and Affiliations

  1. Department of Ceramics and Glass Engineering/CICECO, University of Aveiro, 3810-195, Aveiro, Portugal

    K. Sudheendran

  2. School of Physics, University of Hyderabad, Hyderabad, 500046, India

    K. C. James Raju

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  1. K. Sudheendran
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  2. K. C. James Raju
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Correspondence to K. Sudheendran.

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Sudheendran, K., James Raju, K.C. Electrical properties of pulsed laser deposited Bi2Zn2/3Nb4/3O7 thin films for high K gate dielectric application. J Mater Sci: Mater Electron 22, 626–630 (2011). https://doi.org/10.1007/s10854-010-0187-7

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  • DOI: https://doi.org/10.1007/s10854-010-0187-7

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