Abstract
Mo0.5W0.5Se2 thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10−5 (Ωcm)−1.
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Hankare, P.P., Manikshete, A.H., Sathe, D.J. et al. Structural, optical and microscopic properties of chemically deposited Mo0.5W0.5Se2 thin films. J Mater Sci: Mater Electron 21, 698–701 (2010). https://doi.org/10.1007/s10854-009-9980-6
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DOI: https://doi.org/10.1007/s10854-009-9980-6