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Crystallization of silicon films by new metal mediated mechanism

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Abstract

In this paper, highly crystallized silicon films can be obtained by using a new metal-mediated mechanism. In this method, the infrared radiation was absorbed by a reusable metal-coated plate and then the photon energy was converted into heat. The transferred heat was provided to crystallize amorphous silicon into polycrystalline silicon. Contrary to the conventional metal induced crystallization method, it was proved that this proposed method was free from the inclusion of metal atom in crystallized films. The average grain size, surface roughness and average sheet resistance of crystallized film are 0.9 μm, 0.51 nm and 90 Ω/□, respectively.

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Acknowledgments

The authors thank the National Science Council (NSC) of the Republic of China, Taiwan for the financial support of this research under contract no. of NSC 97-2221-E-036-041. They also thank the financial supports from Chunghwa Picture Tubes Ltd and Tatung University under contract numbers of E9712-O02-023 and 9249, respectively.

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Authors and Affiliations

  1. Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei, Taiwan, ROC

    Chiung Wei Lin, Seng Chi Lee & Yeong Shyang Lee

  2. R&D Center, Thin Film Photovoltaics, Dupont Apollo, Hong Kong, China

    Yeong Shyang Lee

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  1. Chiung Wei Lin
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  2. Seng Chi Lee
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  3. Yeong Shyang Lee
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Correspondence to Chiung Wei Lin.

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Lin, C.W., Lee, S.C. & Lee, Y.S. Crystallization of silicon films by new metal mediated mechanism. J Mater Sci: Mater Electron 21, 270–277 (2010). https://doi.org/10.1007/s10854-009-9904-5

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  • DOI: https://doi.org/10.1007/s10854-009-9904-5

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