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SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing

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Abstract

The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the electron beam perpendicularly to the Schottky barrier playing a role of collector. The minority carrier diffusion length L and the depletion region width W were obtained by fitting the experimental dependence of collected current on beam energy. Some extended defects were revealed, which were associated with zinc precipitates and/or dislocations.

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Authors and Affiliations

  1. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432, Russia

    E. B. Yakimov

  2. Institute of Physics & Technology, Russian Academy of Sciences, Moscow, 117218, Russia

    V. V. Privezentsev

Authors
  1. E. B. Yakimov
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  2. V. V. Privezentsev
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Correspondence to V. V. Privezentsev.

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Yakimov, E.B., Privezentsev, V.V. SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing. J Mater Sci: Mater Electron 19 (Suppl 1), 277–280 (2008). https://doi.org/10.1007/s10854-008-9730-1

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  • DOI: https://doi.org/10.1007/s10854-008-9730-1

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