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Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications

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Abstract

GaBi x As1−x layers with compositions of 0 < x < 0.11 were grown on GaAs substrates by low-temperature molecular-beam-epitaxy. Energy bandgaps as narrow as 0.74 eV were documented in the layers with the largest Bi-content. This material is also characterized by very short, picosecond carrier lifetimes and is prospective for applications in optoelectronic terahertz radiation components activated by femtosecond pulses of near infrared lasers.

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Acknowledgement

This work was, in part, supported by the Lithuanian Science and Study Foundation, grant Nr. B-07/2007 (TERASPEK).

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Authors and Affiliations

  1. Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

    V. Pačebutas, K. Bertulis, G. Aleksejenko & A. Krotkus

Authors
  1. V. Pačebutas
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  2. K. Bertulis
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  3. G. Aleksejenko
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  4. A. Krotkus
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Correspondence to A. Krotkus.

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Pačebutas, V., Bertulis, K., Aleksejenko, G. et al. Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications. J Mater Sci: Mater Electron 20 (Suppl 1), 363–366 (2009). https://doi.org/10.1007/s10854-008-9625-1

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  • DOI: https://doi.org/10.1007/s10854-008-9625-1

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