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Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon

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Abstract

The effect of point defects on the recombination activity of copper (Cu) precipitates in p-type Czochralski (CZ) silicon has been investigated by means of microwave photoconductivity decay and electron beam induced current (EBIC). It was found that the value of the reciprocal of effective minority carrier lifetime and EBIC contrast of the samples with pre-annealing in Ar, without pre-annealing and with pre-annealing in O2, related to the recombination activity of Cu precipitates, decreased in turn. It was considered that the highest recombination activity of Cu precipitates in the sample with pre-annealing in Ar was mainly attributed to the relative higher minority carrier capture cross section of Cu precipitates, which was affected by the induced vacancies. While the weakest recombination activity of Cu precipitates in the sample with pre-annealing in O2 was ascribed to the relative lower density of Cu precipitates, which was influenced by the induced silicon interstitials.

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Acknowledgments

The authors would thank Dr. Zhenqiang Xi from Zhejiang University of Science and Technology for his helpful discussion. Furthermore, the authors thank the PCSIRT project and 973 project (2007CB6130403) for financial supports.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Weiyan Wang, Deren Yang, Xuegong Yu & Duanlin Que

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  1. Weiyan Wang
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  2. Deren Yang
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  3. Xuegong Yu
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  4. Duanlin Que
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Correspondence to Deren Yang.

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Wang, W., Yang, D., Yu, X. et al. Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon. J Mater Sci: Mater Electron 19 (Suppl 1), 32–35 (2008). https://doi.org/10.1007/s10854-007-9507-y

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