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Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition

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Abstract

WS2 flakes have been grown successfully on SiO2(300 nm)/Si substrate via traditional low-pressure chemical vapor deposition method. We studied the controllable growth of WS2 flakes on three of the growth parameters: the time of S-precursor introduction, the temperature of WO3 precursor and the growth temperature. The as-prepared products were characterized by X-ray photoemission spectroscopy, Raman spectra and atomic force microscopy. It is found that the morphologies of WS2 flakes and the products are highly dependent on the concentration of S-precursor, W-precursor and the ratio of W atoms to S atoms, while large-area WS2 flakes up to 160 μm can be obtained. If the ratio of W/S is ≤1:2, we obtain triangular and hexagonal WS2 flakes. On the contrary, if the ratio of W/S is >1:2, besides WS2 flakes, W nanowires will be formed owing to the superfluous W atoms. This study can provide an important and practical guide to preparing large-area and high-quality two-dimensional transition metal dichalcogenides materials.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (11504180, 11374162, 11404171), the Scientific Research Foundation of Nanjing University of Posts and Telecommunications (NY214149), Natural Science Youth Foundation of Jiangsu Province (BK20130865) and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (14KJB430020 and TJ215009).

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Authors and Affiliations

  1. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210046, China

    Song Hu, Xiangfu Wang, Lan Meng & Xiaohong Yan

  2. Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing, 210023, China

    Song Hu, Xiangfu Wang, Lan Meng & Xiaohong Yan

  3. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China

    Xiaohong Yan

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  1. Song Hu
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  2. Xiangfu Wang
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  3. Lan Meng
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  4. Xiaohong Yan
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Correspondence to Lan Meng or Xiaohong Yan.

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Hu, S., Wang, X., Meng, L. et al. Controlled synthesis and mechanism of large-area WS2 flakes by low-pressure chemical vapor deposition. J Mater Sci 52, 7215–7223 (2017). https://doi.org/10.1007/s10853-017-0958-0

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  • DOI: https://doi.org/10.1007/s10853-017-0958-0

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