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Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique

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Abstract

WS2 flakes have been grown successfully on SiO2 substrate via chemical vapor deposition method by reduction and sulfurization of WO3 using Ar/H2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS2 monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS2 flakes with an average length of more than 35 µm were achieved. The sharp PL peak (∼ 1.98 eV) and two distinct Raman peaks (E2g and A1g) with a ∼ 71.5 cm−1 peak split indicating that relatively high quality WS2 crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS2.

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Acknowledgements

We thank from West Tehran Branch Azad University for financial support of this article.

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  1. Department of Physics, Islamic Azad University, West Tehran Branch, Tehran, Iran

    Somayeh Asgary, Amir Hoshang Ramezani & Zhaleh Ebrahimi Nejad

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Asgary, S., Ramezani, A.H. & Ebrahimi Nejad, Z. Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique. Appl. Phys. A 128, 139 (2022). https://doi.org/10.1007/s00339-022-05270-0

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