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Structural, optical and electrical measurements on boron-doped CdO thin films

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Abstract

Several boron-doped CdO with different boron composition thin films have been prepared on glass substrate by a vacuum evaporation technique. The effects of boron doping on the structural, electrical and optical properties of the host CdO films were systematically studied. The X-ray diffraction study shows that some of B3+ ions occupied locations in interstitial positions and/or Cd2+-ion vacancies of CdO lattice. The band gap of B-doped CdO suffers narrowing by 30–38% compare to undoped CdO. Such band gap narrowing (BGN) was studied in the framework of the available models. Furthermore, a phenomenological evaluation of the dependence of band gap on the carrier concentration in the film samples is discussed. The electrical behaviours show that all the prepared B-doped CdO films are degenerate semiconductors. However, the boron doping influences all the optoelectrical properties of CdO. Their dc-conductivity, carrier concentration and mobility increase compare to undoped CdO film. The largest mobility of 45–47 cm2/V s was measured for 6–8% boron-doped CdO film. From near infrared transparent-conducting oxide (NIR-TCO) point of view, boron is effective for CdO donor doping.

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Acknowledgement

The author is grateful to Dr. K. I. Jassem and Ms. Hanan Khalifa from Central Labs/College of Science/SEM laboratory.

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  1. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhier, Kingdom of Bahrain

    A. A. Dakhel

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  1. A. A. Dakhel
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Correspondence to A. A. Dakhel.

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Dakhel, A.A. Structural, optical and electrical measurements on boron-doped CdO thin films. J Mater Sci 46, 6925–6931 (2011). https://doi.org/10.1007/s10853-011-5658-6

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  • DOI: https://doi.org/10.1007/s10853-011-5658-6

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