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Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni1−xO films by DC sputtering

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Abstract

Thin films of NiO (bunsenite) with (200) preferential orientation were synthesized on glass substrates by direct current sputtering technique in Ar+O2 atmosphere. Nanostructural properties of the NiO films were investigated by X-ray diffraction and also by atomic force microscopic (AFM) studies. Electrical and optical properties of the deposited films were investigated as a function of different partial pressure of oxygen in the sputtering gas mixture during deposition. The films showed p-type electrical conduction and the conductivity depends on the partial pressure of oxygen. The electrical conductivity (σRT) was found to be .0615 S cm−1 for films deposited with 100% O2 and its value sharply decreased with the decrease the partial pressure of O2; for example σRT for 50% O2 was 6.139 × 10−5 S cm-1. The mechanism of the origin of p-type electrical conductivity in the NiO film is discussed from the viewpoint of nickel or oxygen vacancies, which generate holes and electrons respectively. X-ray photoelectron spectroscopic studies supported the above argument. Corresponding optical properties showed that the transparency decreases with increasing oxygen partial pressure and the bandgap also decreases.

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Acknowledgements

The authors wish to thank Department of Science and Technology (DST), Govt. of India for financial support. The authors also wish to thank the University Grants Commission (UGC), Govt. of India, for providing some characterizational facilities under the ‘University with potential for Excellence’ scheme during the execution of the work. One of (BS) also wishes to thank UGC for awarding a junior research fellowship (JRF) during the execution of the work.

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Authors and Affiliations

  1. Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata, 700 032, India

    Suman Nandy, Biswajit Saha & K. K. Chattopadhyay

  2. Nanoscience and Technology Center, Jadavpur University, Kolkata, 700 032, India

    Manoj K. Mitra & K. K. Chattopadhyay

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  1. Suman Nandy
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  2. Biswajit Saha
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  3. Manoj K. Mitra
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  4. K. K. Chattopadhyay
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Correspondence to K. K. Chattopadhyay.

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Nandy, S., Saha, B., Mitra, M.K. et al. Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni1−xO films by DC sputtering. J Mater Sci 42, 5766–5772 (2007). https://doi.org/10.1007/s10853-006-1153-x

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