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Microstructure and properties of an electroconductive SiC-based composite

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Abstract

In this work, an SiC-based electroconductive composite is obtained through simultaneous addition of MoSi2 and ZrB2 particles. The composite material is fully densified by hot pressing at 1860 °C and the microstructure is investigated by SEM-EDS analysis. Microstructural features and mechanical properties are compared to those of a monolithic hot-pressed SiC material. The MoSi2 and ZrB2 particles, besides increasing the electrical conductivity of the silicon carbide matrix, also act as reinforcement for the material. Room-temperature strength reaches the value of 850 MPa and the fracture toughness is 4.2 MPa m0.5. The composite electrical resistivity is of the order of 10−3 Ω cm.

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Authors and Affiliations

  1. CNR-ISTEC, Institute of Science and Technology for Ceramics, Via Granarolo 64, 48018, Faenza, Italy

    Diletta Sciti, Andrea Balbo & Cesare Melandri

  2. Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan

    Giuseppe Pezzotti

  3. Research Institute for Nanoscience (RIN), Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan

    Diletta Sciti & Giuseppe Pezzotti

Authors
  1. Diletta Sciti
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  2. Andrea Balbo
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  3. Cesare Melandri
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  4. Giuseppe Pezzotti
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Correspondence to Diletta Sciti.

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Sciti, D., Balbo, A., Melandri, C. et al. Microstructure and properties of an electroconductive SiC-based composite. J Mater Sci 42, 5570–5575 (2007). https://doi.org/10.1007/s10853-006-0992-9

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  • DOI: https://doi.org/10.1007/s10853-006-0992-9

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