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The study of optical properties of In2O3 and of mixed oxides In2O3−MoO3 system deposited by coevaporation

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Abstract

A discussion of the optical properties of two systems of dielectric films i.e. In2O3 and of mixed oxides In2O3−MoO3 system is presented. Film thickness, substrate temperature, annealing and composition (in molar%) have a profound effect on the structure and optical properties of these films. The decrease in optical band gap with the increase in film thickness of In2O3 is interpreted in terms of incorporation of oxygen vacancies in the In2O3 lattice. The decrease in optical band gap with the increase in substrate temperature and annealing of In2O3 thin films is ascribed to the release of trapped electrons by thermal energy or by the outward diffusion of the oxygen-ion vacancies, which are quite mobile even at low temperature. For the mixed oxides In2O3−MoO3 system the results are found to be compatible with the reduction in the value of optical band gap of these materials as the molar fraction of MoO3 increases in the In2O3 thin films and is attributed to the incorporation of Mo(VI) ions in an In2O3lattice that causes the indium orbital to become a little less tightly bound. The decrease in optical band gap of mixed oxides In2O3−MoO3 system, with increasing film thickness is interpreted in terms of incorporation of oxygen vacancies in both In2O3 and MoO3 lattice which are also believed to be the source of conduction electrons in In2O3–MoO3 complex. The decrease in optical band gap with increasing substrate temperature and annealing of mixed oxides In2O3−MoO3 system is due to the increasing concentration of oxygen vacancies, formation of indium and molybdenum species of lower oxidation state and indium interstitials. The blue colouration of mixed oxides In2O3–MoO3 samples is due to the inter-electron transfer from oxygen 2p to molybdenum 4d level due to which Mo species of lower oxidation states are formed.

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References

  1. H. L. HARTNAGEL, A. L. DAWAR, A. K. JAIN and C. JAGADISH, “Semiconducting Transparent Thin Films” (Institute of Physics, Bristol, 1995).

  2. Y. SHIGESATO and D. C. PAINE, Thin Solid Films. 238 (1994) 44.

    Article  CAS  Google Scholar 

  3. H. OHTA, M. ORITA, M. HIRANO and H. HOSONO, J. Appl. Phys. 91 (6) (2002) 3547.

    Article  CAS  Google Scholar 

  4. G. B. Gonzaliz, J. B. COHEN, J. H. HWANG, T. O. MASON, J. P. HODGES and J. D. JORGENSEN, ibid. 89 (2001) 2550.

    Article  CAS  Google Scholar 

  5. M. GIRTAN and G. I. RUSU, Fizica Starri Condensate. XLV-XLVI (1999) 166.

    Google Scholar 

  6. K. ARSHAK and K. TWOMEY, Sensors, 2 (2002) 205.

    Article  CAS  Google Scholar 

  7. D. D. EDWARDS, T. O. MASON, F. GOUTENOIRE and K. R. POEPPELMEIER, Appl. Phys. Lett. 70 (13) (1997) 1706.

    Article  CAS  Google Scholar 

  8. K. S. RAMAIAH, V. S. RAJA, A. K. BHATNAGAR, R. D. TOMLINSON, R. D. PILKINGTON, A. E. HILL, . S. J. CHANG, Y. K. SU and F. S. JUANG, Semicond. Sci. Technol. 15 (7) (2000) 676.

    Google Scholar 

  9. P. MANIVANNAN and A. SUBRAHMANYAM, J. Phys. D: Appl. Phys. 27 (1993) 1085.

    Article  Google Scholar 

  10. J. ASBALTER and A. SUBRAHMANYAM, J. Vac. Sci. and Technol. 18 (1999) 1672.

    Article  Google Scholar 

  11. D. MANNO, M. DI GIULIO, A. SERRA, T. SICILIANO and G. MICOCCI, J. Phys. D: Appl. Phys. 35 (2002) 228.

    Article  CAS  Google Scholar 

  12. T. MARUYAMA and T. KANAGAWA, J. Electrochem. Soc. 142 (1995) 1644.

    CAS  Google Scholar 

  13. M. CHEN, U. V. WAGHMARE, C. M. FRIEND and E. KAXIRAS, J. Chem. Phys. 109 (1998) 6854.

    Article  CAS  Google Scholar 

  14. J. ZHOU, S. Z. DENG, N. S. XU, J. CHEN, and J. C. SHE, Appl. Phys. Letts. 83 (2003) 2653.

    Article  CAS  Google Scholar 

  15. WANG CHENGYU and H. U. YINGJIE, J. Chinese Ceramic Soc. 24(5) (1996) 654.

    Google Scholar 

  16. M. KHARRAZI, L. KULLMAN and C. G. GRANQVIST, Solar Energy Materials and Solar Cells. 53 (1998) 349.

    Article  CAS  Google Scholar 

  17. T. IVANOVA, A. SZEKERES, M. GARTNER, D. GOGOVA and K. A. GESHEVA, Electrochimica Acta. 46 (2001) 2215.

    Article  CAS  Google Scholar 

  18. Y. ZHAO, J. LIN, Y. ZHOU, Z. ZHANG, Y. XU, H. NARAMATO and S. YAMAMOTO, J. Phys: Conden. Matter. 15 (2003) L547.

    Article  CAS  Google Scholar 

  19. A. SIOKOU, G. LEFTHERIOTIS, S. PAPAEFTHIMIOU and P. YIANOULIS, Surf. Sci. 482 (2001) 294.

    Article  Google Scholar 

  20. M. YAHYA, M. M. SALLEH, I. A. TALIB and M. M. NOR, Third International Conference on Thin Film Physics and Application Shanghai, China, SPIE Proc. (1998) 42.

  21. K. V. MADHURI, K. S. RAO, S. UTHANNA, B. S. NAIDU and O. M. HUSSAIN, J. Indian Inst. Scc. 81 (2001) 653.

    CAS  Google Scholar 

  22. M. ANWAR, I. M. GHAURI and S. A. SIDDIQI, Czech. J. Phys. 55(8) (2005) 1013.

    Article  Google Scholar 

  23. J. TAUC, R. GRIGOROVICI and A. VANCU, Phys. Stat. Sol. 15 (1966) 627.

    CAS  Google Scholar 

  24. E. A. DAVIS and N. F. MOTT, Phil. Mag. 22 (1970) 903.

    CAS  Google Scholar 

  25. S. K. J. AL-ANI and A. A. HIGAZY, J. Mater. Sci. 26 (1991) 3670.

    Article  CAS  Google Scholar 

  26. F. URBACH, Phys. Rev. 92 (1953) 1324.

    Article  CAS  Google Scholar 

  27. C. GOEBBERT, R. NONNINGER, M. A. AEGERTER and H. SCHMIDT, Thin Solid Films, 351 (1999) 79.

    Article  CAS  Google Scholar 

  28. A. KLEIN, Appl. Phys. Lett. 77 (2000) 2009.

    Article  CAS  Google Scholar 

  29. G. KIRIAKIDIS, H. OUACHA and N. KATSARAKIS, Rev. Adv. Mater. Sci. 4 (2003) 32.

    CAS  Google Scholar 

  30. S. A. BUKESOV, J. Y. KIM, A. V. STRELTSON and D. Y. JEON, J. Appl. Phys. 91 (11) (2002) 9078.

    Article  CAS  Google Scholar 

  31. M. M. BAGHERI-MOHAGHEGHI and M. SHOKOOAH-SAREMI, Semicond. Sci. Technol. 18 (1997) 103.

    Google Scholar 

  32. A. TAURINO, M. CATALANO, R. RELLA, P. SICILIANO and W. WLODARSKI, J. Appl. Phys. 93 (7) (2003) 3816.

    Article  CAS  Google Scholar 

  33. H. KIM, C. M. GILMORE, A. PIQUE, J. S. HORWITZ, H. MATTOUSSI, H. MURATA, Z. H. KAFAFI, and D. B. CHRISEY, ibid. 86 (1999) 6451.

    Article  CAS  Google Scholar 

  34. M. ANWAR, I. M. GHAURI, and S. A. SIDDIQI, Electronic Conductions in In2O3, Czech J. Phys. 55(10) (2005) 1261.

    Google Scholar 

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Authors and Affiliations

  1. Physics Department, Government College, Burewala, Pakistan

    M. Anwar

  2. Centre for Advanced Studies in Physics, G. C. University, Lahore, Pakistan

    I. M. Ghauri

  3. Centre for Solid State Physics, University of the Punjab, Lahore, Pakistan

    S. A. Siddiqi

Authors
  1. M. Anwar
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  2. I. M. Ghauri
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  3. S. A. Siddiqi
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Correspondence to M. Anwar.

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Anwar, M., Ghauri, I.M. & Siddiqi, S.A. The study of optical properties of In2O3 and of mixed oxides In2O3−MoO3 system deposited by coevaporation. J Mater Sci 41, 2859–2867 (2006). https://doi.org/10.1007/s10853-005-5158-7

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  • DOI: https://doi.org/10.1007/s10853-005-5158-7

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