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Oxygen vacancy induced room temperature ferromagnetism in (In1−xNix)2O3 thin films

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Abstract

Nickel doped indium oxide thin films (In1−xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1−xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1−xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1−xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

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Acknowledgements

Authors are grateful to UGC-DAE-CSR, IGCAR, Kalpakkam, 603102, Tamil Nadu, India for providing financial support under Project Sanction Number (CSR-KN/CRS-72/2015-2016/809) to carry out the present work. The authors are highly thankful to VIT-SIF for providing, XRD, SEM and DRS facilities to carry out the present work.

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Authors and Affiliations

  1. Department of Physics, School of Advanced Sciences, VIT, Vellore, Tamil Nadu, 632 014, India

    Deepannita Chakraborty

  2. Thin Films Laboratory, Center for Crystal Growth, VIT, Vellore, Tamil Nadu, 632 014, India

    S. Kaleemulla & M. Kuppan

  3. Center for Regional Revitalization in Research and Education of Akita University, Akita University, Akita City, 010-8502, Japan

    M. Kuppan

  4. Department of Physics, VIT-AP, Amaravati, Andhra Pradesh, 522237, India

    N. Madhusudhana Rao

  5. Center for Nanotechnology Research, VIT, Vellore, Tamil Nadu, 632 014, India

    C. Krishnamoorthi

  6. School of Advanced Materials Sciences and Engineering, Sungkyunkwan University, Gyeonggi, 16419, Republic of Korea

    I. Omkaram

  7. Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea

    D. Sreekantha Reddy

  8. Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu, 603102, India

    G. Venugopal Rao

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  1. Deepannita Chakraborty
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  2. S. Kaleemulla
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  3. M. Kuppan
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  8. G. Venugopal Rao
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Correspondence to S. Kaleemulla.

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Chakraborty, D., Kaleemulla, S., Kuppan, M. et al. Oxygen vacancy induced room temperature ferromagnetism in (In1−xNix)2O3 thin films. Indian J Phys 92, 619–628 (2018). https://doi.org/10.1007/s12648-017-1145-5

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  • DOI: https://doi.org/10.1007/s12648-017-1145-5

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