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Enhanced dielectric properties of Bi1.5ZnNb1.5O7 thick films via cold isostatic pressing

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Abstract

Dense Bi1.5ZnNb1.5O7 thick films were prepared on Ag/Al2O3 substrates using screen-printing technology at a lower temperature of 825 °C. A novel pretreatment of cold isostatic pressing was introduced to enhance the quality of thick films. After cold isostatic pressing prior to sintering, the microstructure of thick films was improved with a more compact morphology and better dielectric properties, and the permittivity and dielectric loss of thick films sintered at 900 °C were about 160 and 0.006. The obvious tunability of thick films was also observed, and the tunability value reached about 3 % for thick films sintered at 900 °C under 400 kV/cm. The enhanced properties and low-temperature sintering made this compound a potential candidate for Low Temperature Co-fired Ceramic (LTCC).

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Acknowledgement

This work was supported by the National 973-project of China (2009CB623302) and Foundation of Shaanxi Educational Committee (12JK0462).

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Authors and Affiliations

  1. School of electronic engineering, Xi’an university of posts and telecommunications, Xi’an, 710121, China

    Weihong Liu

  2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an, 710049, China

    Hong Wang

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  1. Weihong Liu
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  2. Hong Wang
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Correspondence to Weihong Liu.

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Liu, W., Wang, H. Enhanced dielectric properties of Bi1.5ZnNb1.5O7 thick films via cold isostatic pressing. J Electroceram 29, 183–186 (2012). https://doi.org/10.1007/s10832-012-9758-8

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  • DOI: https://doi.org/10.1007/s10832-012-9758-8

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