Abstract
Nd-doped bismuth titanate Bi4 − x Nd x Ti3O12 ceramics (x = 0–1.0) were prepared by the solid state reaction method. The temperature dependence of the dielectric dispersion and ferroelectric properties were investigated. With the increase of the Nd substitution for Bi ion, the Curie temperature decreased and the corresponding dielectric constant peak broadened. In addition, the strong low-frequency dielectric dispersions were exhibited. The Nd doping decreases the temperature dependence of the ac conductivity and increases the temperature dependence of the remanent polarization, which is caused by the induced polarization by defects, such as bismuth and oxygen vacancies.
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Kim, J.S., Kim, I.W. Temperature dependence of the dielectric dispersion and ferroelectric properties of neodymium doped bismuth titanate ceramics. J Electroceram 16, 373–377 (2006). https://doi.org/10.1007/s10832-006-9882-4
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DOI: https://doi.org/10.1007/s10832-006-9882-4