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Electronic and transport properties of silicon nanowires

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Abstract

The electronic, structural and transport properties of silicon nanowires have been investigated with different approaches. The Empirical Tight-Binding model (ETB) and Linear Combination of Bulk Bands (LCBB) method are used to calculate effect of quantum confinement on electronic energies, bandgap and effective masses in silicon nanowires in function of Si cell size. Both hydrogenated and SiO2 terminated silicon surfaces are studied. Transport properties of nanowires are obtained by applying the Non-Equilibrium Green Function (NEGF) method. NEGF approach has been used to describe nanoMOSFET devices based on Silicon nanowires.

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References

  1. Di Carlo, A.: Semicond. Sci. Technol. 18, R1–R31 (2003); Pecchia, A., Di Carlo, A.: Rept. Progr. Phys. 67, 1497–1561 (2004)

  2. Sacconi, F., Di Carlo, A., Lugli, P., Städele, M., Jancu, J.M.: IEEE Trans. Elect. Dev. 51(5), 741–748 (2004)

    Article  Google Scholar 

  3. Grosso, G., Martinelli, L., Pastori, G.: Parravicini. Phys. Rev. B 51 13033 (1995)

    Article  Google Scholar 

  4. Sacconi, F., Povolotskyi, M., Di Carlo, A., Lugli, P., Städele, M.: Solid-state electron 48, 575–580 (2004)

  5. Zheng, Y., Rivas, C., Lake, R., Alam, K., Boykin, T.B., Klimeck, G.: IEEE Trans. Electron Dev. 52, 6 (2005)

    Article  Google Scholar 

  6. Fridel, P., Hybertsen, M.S., Schlüter, M.: Phys. Rev. B 39, 7974 (1989)

    Article  Google Scholar 

  7. Di Carlo, A. et al.: In: Introducing Molecular Electronics. Cuniberti, G., Fagas, G., Richter, K. (eds.). Spinger, Heidelberg (2005)

  8. Zhang, R.Q., Lifshitz, Y., Ma, D.D.D., Zhao, Y.L., Frauenheim, Th., Lee, S.T., Tong, S.Y.: J. Chem. Phys. 123, 144703 (2005)

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Electronics Engineering, University of Rome “Tor Vergata”, Rome, Italy

    F. Sacconi, M. P. Persson, M. Povolotskyi, L. Latessa, A. Pecchia & A. Di Carlo

  2. University of Paderborn, Warburger Str. 100, 33100, Paderborn, Germany

    A. Gagliardi, A. Balint & T. Fraunheim

Authors
  1. F. Sacconi
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  2. M. P. Persson
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  3. M. Povolotskyi
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  4. L. Latessa
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  5. A. Pecchia
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  6. A. Gagliardi
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  7. A. Balint
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  8. T. Fraunheim
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  9. A. Di Carlo
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Correspondence to A. Di Carlo.

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Sacconi, F., Persson, M.P., Povolotskyi, M. et al. Electronic and transport properties of silicon nanowires. J Comput Electron 6, 329–333 (2007). https://doi.org/10.1007/s10825-006-0138-y

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  • DOI: https://doi.org/10.1007/s10825-006-0138-y

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