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Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

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An Erratum to this article was published on 01 December 2006

Abstract

Transport in single and double barrier devices is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effects of tunneling and scattering to be included. Several numerical methods have been improved to render the Wigner Monte Carlo technique more robust, including a newly developed particle annihilation algorithm. A self-consistent iteration scheme with the Poisson equation was introduced. The role of scattering and space charge effects on the electrical characteristics of n-i-n nanostructures, ultra-scaled double gate MOSFETs, and GaAs resonant tunneling diodes is demonstrated.

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Correspondence to Viktor Sverdlov.

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An erratum to this article can be found at http://dx.doi.org/10.1007/s10825-007-0146-6

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Sverdlov, V., Grasser, T., Kosina, H. et al. Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices. J Comput Electron 5, 447–450 (2006). https://doi.org/10.1007/s10825-006-0041-6

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  • DOI: https://doi.org/10.1007/s10825-006-0041-6

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