The formation of tin nanocrystallites in a SiO2:Sn matrix using a high-dose implantation technique followed by high-temperature processing was studied. Structural phase transformations were studied by plan-view transmission electron microscopy. Optical properties of the implanted samples were investigated by photoluminescence. It was shown that annealing of the implanted SiO2 layers formed nanoprecipitates of β-Sn and caused the appearance of regions enriched in SnO2. Photoluminescence spectra of implanted and annealed samples exhibited intense emission in photon energy range 1.3–3.6 eV that was attributed to oxygen-deficit centers created in the SiO2:Sn matrix and at the nanocluster/SiO2 interface.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 80, No. 6, pp. 864–870, November–December, 2013.
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Komarov, F.F., Vlasukova, L.A., Milchanin, O.V. et al. Structural and Luminescent Properties of Sn-Doped SiO2 Layers. J Appl Spectrosc 80, 855–860 (2014). https://doi.org/10.1007/s10812-014-9856-2
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DOI: https://doi.org/10.1007/s10812-014-9856-2