Abstract
Diagnostic criteria were developed to elucidate the reduction mechanism of an oxidant on a copper (Cu) surface at the corrosion potential. The corrosion potential of Cu tu was measured for various pH and iodate (IO −3 ) concentrations using the rotating disk electrode technique. According to the measured corrosion potentials, IO −3 was an effective CMP oxidant only below pH Application of the diagnostic criteria on the Cu – IO −3 system showed that the reduction of IO −3 on Cu was under the mixed kinetic and diffusion control at the corrosion potentia l below pH 3. Above pH 3, however, the anodic process dominated over the cathodic process.
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References
S.P. Murarka (1997) Metallisation Butterworth-Heinemann Boston 209
J.M. Steigerwald S.P. Murarka R.J. Gutmann (1997) Chemical Mechanical Planarization of Microelectronic Materials Wiley New York 209
F.B. Kaufman D.B. Thompson R.E. Broadie M.A. Jaso W.L. Guthrie D.J. Pearson M.B. Small (1991) J. Electrochem. Soc. 138 3460
J. Warnock (1991) J. Electrochem. Soc. 138 2398
S.R. Runnels (1994) J. Electrochem. Soc. 141 1900
G. Nanz L.E. Camilletti (1995) IEEE Trans. Semicond. Manuf. 8 382
N. Elbel B. Neureither B. Ebersberger P. Lahnor (1998) J. Electrochem. Soc. 145 1659
D. Boning, B. Lee, C. Oji, D. Ouma, T. Park, T. Smith and T. Tugbawa, in S.V. Babu, S. Danyluk, M. Krishnan and M. Tsujimura (Eds), ‘Chemical Mechanical Polishing-Fundamentals and Challenges’, Vol. 566 (MRS, Warrendale, PA, 2000), p. 197.
S. Basak, K. Misra, B. Withers and K. Rajeshwar, in S. Raghavan and I. Ali (Eds), ‘First Int. Symp. Chemical Mechanical Planarization’, Vol. 96–22 (Electrochem. Soc., Pennington, NJ, 1997), p. 137.
E.A. Kneer C. Raghunath V. Mathew S. Raghavan J.S. Jeon (1997) J. Electrochem. Soc. 144 3041
D.J. Stein D. Hetherington T. Guilinger J.L. Cecchi (1998) J. Electrochem. Soc. 145 3190
D.J. Stein D.L. Hetherington J.L. Cecchi (1999) J. Electrochem. Soc. 146 376
D. Tamboli S. Seal V. Desai A. Maury (1999) J. Vac. Sci. Technol. A 17 1168
H.S. Kuo W.T. Tsai (2000) J. Electrochem. Soc. 147 2136
Y. Ein-Eli A. Abelev E. Rabkin D. Starosvetsky (2003) J. Electrochem. Soc. 150 C646
K.J. Vetter (1967) Electrochemical Kinetics Academic Press New York 732
G.P. Power I.M. Ritchie (1981) Electrochim. Acta 26 1073
G.P. Power I.M. Ritchie (1981) Electrochim. Acta 27 165
J. Li T. Zhang M.E. Wadsworth (1992) Hydrometallurgy 29 47
H. van Kranenburg P.H. Woerlee (1998) J. Electrochem. Soc. 145 1285
Y.L. Wang C. Liu C. Liu M.S. Feng W.T. Tseng (1998) Mat. Chem. Phy. 52 17
M. Anik and K. Osseo-Asare, in YA. Arimoto, R.L. Opila, C.R. Simpson, K.B. Sundaram, I. Ali and Y. Homma (Eds), ‘Chemical Mechanical Polishing in IC Device Manufacturing III’, PV 1999-37 (Electrochem. Soc. Proc. Pennington, NJ, 2000), p. 354.
M. Anik and K. Osseo-Asare, in P.C. Andricacos, J.L. Stickney, P.C. Searson, C. Reidsema-Simpson and G.M. Oleszek (Eds), ‘Electrochemical Processing in ULSI Fabrication III’, PV 2000-8 (Electrochem. Soc. Proc. Pennington, NJ, 2002), p. 234.
U. Bertocci and D.R. Turner, in A.J. Bard (Ed), ‘Encyclopedia of Electrochemistry of the Elements’, Vol. 6 (Marcel Dekker, New York, 1977), p. 383.
P.G. Desideri, L. Lepri and D. Heimler, in A.J. Bard (Ed), ‘Encyclopedia of Electrochemistry of the Elements’, Vol. 1 (Marcel Dekker, New York, 1973), p. 91.
A.J. Bard L.R. Faulkner (1980) Electrochemical Methods Wiley New York 280
M. Anik (2004) J. Appl. Electrochem. 34 963
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Anik, M. Selection of an oxidant for copper chemical mechanical polishing: Copper-iodate system. J Appl Electrochem 35, 1–7 (2005). https://doi.org/10.1007/s10800-004-1763-4
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DOI: https://doi.org/10.1007/s10800-004-1763-4