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In situ Silicon-Wafer Surface-Temperature Measurements Utilizing Polarized Light

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Abstract

An overview is presented on the activity with industrial partners to solve problems at the production sites in the semiconductor industry. Based on a survey on temperature needs and techniques in the semiconductor device fabrication industry, two target processes with the most pressing demands for in situ temperature measurements were selected: plasma etching and flash lamp annealing (FLA). A novel approach for emissivity compensated radiation thermometry was applied to sub-millisecond response measurement for FLA. The approach has features that make it suitable for in situ applications. Results of thermal profile measurements conducted on a FLA chamber are described.

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Authors and Affiliations

  1. National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (NMIJ, AIST), Tsukuba, Ibaraki, Japan

    Y. Yamada & J. Ishii

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  1. Y. Yamada
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  2. J. Ishii
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Correspondence to Y. Yamada.

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Yamada, Y., Ishii, J. In situ Silicon-Wafer Surface-Temperature Measurements Utilizing Polarized Light. Int J Thermophys 32, 2304–2316 (2011). https://doi.org/10.1007/s10765-011-1071-2

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  • DOI: https://doi.org/10.1007/s10765-011-1071-2

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