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Analytical modelling and design of 9T SRAM cell with leakage control technique

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Abstract

This paper presents a novel 9T static random access memory (SRAM) cell consisting of a single ended isolated read bit line with 2T read port for improving stability and a tail transistor for saving power. In the proposed design owing to the use of separate bitlines, the storing node voltage has not been affected during active mode operation. In the idle (hold) mode the static power dissipation of SRAM cell has been drastically reduced due to the formation of stack between tail transistor and internal latch. The proposed design has been verified by cadence virtuoso tool using UMC 65 nm CMOS technology. It provides a 42% and 34% improvement in write stability when compared to basic 6T and ultralow voltage (UV) 9T SRAM cells respectively. It has been observed that, the read stability is improved by 12% when compared to basic 6T SRAM cell and penalty of 10% when compared to UV 9T SRAM cell. A reduction of 22% in static power dissipation has also been observed in proposed design as compared to basic 6T SRAM cell when designed at same technology. This paper has also been proposed a mathematical modelling for validating the proposed design.

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Acknowledgements

The authors would like to express gratitude to Meity (Ministry of Electronics and Information Technology, Govt. of India) for providing support under SMDPC2SD project and for Visvesvaraya PhD Scheme.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, India

    Jitendra Kumar Mishra, Harshit Srivastava, Prasanna Kumar Misra & Manish Goswami

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  1. Jitendra Kumar Mishra
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  2. Harshit Srivastava
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  3. Prasanna Kumar Misra
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  4. Manish Goswami
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Correspondence to Manish Goswami.

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Mishra, J.K., Srivastava, H., Misra, P.K. et al. Analytical modelling and design of 9T SRAM cell with leakage control technique. Analog Integr Circ Sig Process 101, 31–43 (2019). https://doi.org/10.1007/s10470-019-01483-1

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  • DOI: https://doi.org/10.1007/s10470-019-01483-1

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