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Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting

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Abstract

Indium selenide (γ-In2Se3) films were prepared using RF magnetron sputtering. Influence of deposition time on structural, optical, morphological, and photoelectrochemical (PEC) performance was studied. Formation of γ-In2Se3 is confirmed by low angle XRD, Raman spectroscopy, and XPS analysis. Surface morphology investigated using FE-SEM shows that γ-In2Se3 films are uniform and have a dense grain structure, without cracks and holes. Optical properties show that γ-In2Se3films absorb mainly in the UV region, and the bandgap energy decreases from 2.81 to 2.27 eV as deposition duration increases. Conduction and valance band-edge potential values show that γ-In2Se3 films are suitable for photoelectrochemical hydrogen evolution. PEC activity of γ-In2Se3 photoanodes was evaluated using linear sweep voltammetry (LSV), and there was an increase in photocurrent density with deposition time. Electron impedance spectroscopy (EIS) analysis revealed that γ-In2Se3 photoanodes had high charge transfer resistance, and it decreases with deposition time, which leads to improved PEC performance. Investigation of Mott Schottky's (MS) results shows a shifting of flat band potential towards negative potential, suggesting movement of fermi level towards conduction band edge. Carrier density increases from 3.7 × 1019 cm−3 to 8.9 × 1020 cm−3 and depletion layer width of γ-In2Se3 photoanodes are found in the range of ~ 2.67–9.10 nm. The gradual increase in electron lifetime indicates a decrease in the recombination rate of photo-generated charge carriers. An increase in time-dependent photocurrent density reveals that γ-In2Se3 films have effective electron–hole separation. Our work demonstrates that γ-In2Se3 can be a probable candidate for PEC water splitting and opto-electronic applications.

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Acknowledgements

Ashish Waghmare, Yogesh Hase, Vidya Doiphode, Shruti Shah, Pratibha Shinde, Subhash Pandharkar, Shruthi Nair, Ashvini Punde, and Bharat Bade are thankful to the Ministry of New and Renewable Energy (MNRE), Government of India, for the financial support under the National Renewable Energy Fellowship (NREF) program. Rahul Aher is thankful to Savitribai Phule Pune University, Pune, for Bharat Ratna JRD Tata Gunwant Sanshodhak Shishyavruti. Vidhika Sharma, Mohit Prasad, and Sandesh Jadkar are grateful to Indo-French Centre for the Promotion of Advanced Research-CEFIPRA, Department of Science and Technology, New Delhi, for special financial support.

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  1. School of Energy Studies, Savitribai Phule Pune University, Pune, 411 007, India

    Ashish Waghmare, Vidhika Sharma, Pratibha Shinde, Ashvini Punde, Priti Vairale, Yogesh Hase, Subhash Pandharkar, Shruthi Nair, Rahul Aher, Vidya Doiphode, Shruti Shah, Swati Rahane, Bharat Bade & Mohit Prasad

  2. School of Chemistry, Cardiff University, Main Building, Park Place, CardiffWales, CF10 3AT, UK

    Sachin Rondiya

  3. Department of Physics, Savitribai Phule Pune University, Pune, 411 007, India

    Sandesh Jadkar

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Waghmare, A., Sharma, V., Shinde, P. et al. Preparation and characterization of γ-In2Se3 thin-film photoanodes for photoelectrochemical water splitting. J Solid State Electrochem 26, 219–232 (2022). https://doi.org/10.1007/s10008-021-05054-1

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