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A model for the voltammetric behaviour of TiO2 memristors

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Abstract

A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.

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Authors and Affiliations

  1. School of Chemical and Pharmaceutical Sciences, Dublin Institute of Technology, Kevin Street Lower, Dublin, D08 NF82, Ireland

    John F. Cassidy

  2. Applied Electrochemistry Group, Dublin Institute of Technology, Kevin Street, Dublin, D08 NF82, Ireland

    Daryl Fox & Anthony J. Betts

Authors
  1. John F. Cassidy
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  2. Daryl Fox
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  3. Anthony J. Betts
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Correspondence to John F. Cassidy.

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Cassidy, J.F., Fox, D. & Betts, A.J. A model for the voltammetric behaviour of TiO2 memristors. J Solid State Electrochem 20, 1229–1234 (2016). https://doi.org/10.1007/s10008-015-3109-z

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  • DOI: https://doi.org/10.1007/s10008-015-3109-z

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