Skip to main content

Advertisement

SpringerLink
Log in

Development and optimization of RF MEMS switch

  • Technical Paper
  • Published:
Microsystem Technologies Aims and scope Submit manuscript

Abstract

Isolation and actuation voltages are important parameters in micro-electro-mechanical switches. These parameters can be destroyed by the effect of creating bulge and erosion in the surface of the beam. In this paper, a fabrication method is proposed to create a smooth and flat beam. Additionally, using two short high impedance transmission lines, the destructive effects on the input/output matching have been reduced. S-parameters and mechanical parameters of the proposed switch are calculated by the network analyzer and laser Doppler vibrometer. According to the results obtained from the proposed switch in the C–K band, the return loss, which is less than − 20 dB, and the highest isolation value, which is equal to − 20 dB, occur at the frequency of 21 GHz. Furthermore, the insertion loss is better than − 1 dB in the full frequency band, which is very desirable. The actuation voltage and resonance frequency were obtained at 18 V and 164 kHz, respectively. Finally, four steps are proposed to optimize the actuation voltage, isolation, stress and switching time, which results in reducing the actuation voltage by 37% and the isolation will increase by 46%. Maximum stress in the initial state is 25 MPa, and decreases to 10 MPa after optimization, which increases the lifetime of the switch.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13
Fig. 14
Fig. 15
Fig. 16

Similar content being viewed by others

References

  • Ansari HR, Khosroabadi S (2019) Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application. Microsyst Technol 25(2):531–540

    Article  Google Scholar 

  • Ansari HR, Khosroabadi S (2018) Low actuation voltage RF MEMS shunt capacitive switch with high capacitive ratio. In: 26th Iranian conference on electrical engineering

  • Badia MF, Buitrago E, Ionescu AM (2012) RF MEMS shunt capacitive switches using ALN compared to Si3N4 dielectric. J Microelectromech Syst 21(5):1229–1240

    Article  Google Scholar 

  • Caratelli D, Massaro A, Cingolani R, Yarovoy AG (2012) Accurate time-domain modeling of reconfigurable antenna sensors for non-invasive melanoma skin cancer detection. IEEE Sens J 12(3):635–643

    Article  Google Scholar 

  • Daneshmand M, Mansour R (2011) RF MEMS satellite switch matrices. IEEE Microwave Mag 12(5):92–109

    Article  Google Scholar 

  • Fouladi S, Mansour R (2010) Capacitive RF MEMS switches fabricated in standard 0.35-m CMOS technology. IEEE Trans Microwave Theory Tech 58(2):478–486

    Article  Google Scholar 

  • Kim CH (2012) Mechanically coupled low-voltage electrostatic resistive RF multithrow switch. IEEE Trans Ind Electron 59(2):1114–1122

    Article  Google Scholar 

  • Mafinejad Y, Kouzani AZ, Nassabi M, Lim Y, Mafinezhad K (2015) Characterization and optimization to improve uneven surface on MEMS bridge fabrication. Displays 37:54–61

    Article  Google Scholar 

  • Mafinejad Y, Kouzani A, Mafinezhad K, Hosseinnezhad R (2017) Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage. Int J Adv Manuf Technol 93:661–670

    Article  Google Scholar 

  • Mahameed R, Rebeiz GM (2011) RF MEMS capacitive switches for wide temperature range applications using a standard thin-film process. IEEE Trans Microw Theory Tech 59(7):1746–1752

    Article  Google Scholar 

  • Makasheva K, Despax B, Boudou L, Teyssedre G (2012) Dielectric layers for RF MEMS switches: design and study of appropriate structures preventing electrostatic charging. IEEE Trans Dielectr Electr Insul 19(4):1195–1202

    Article  Google Scholar 

  • Molaei S, Ganji BA (2017) Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation. Microsyst Technol 23(6):1907–1912

    Article  Google Scholar 

  • Pozar D (2005) Microwave engineering. Wiley, Hoboken

    Google Scholar 

  • Rebeiz GM (2003) RF MEMS: theory, design, and technology. Wiley, New Jersey

    Book  Google Scholar 

  • Rebeiz GM et al (2009) Tuning into RF MEMS. IEEE Microwave Theory Tech Soc 10(6):55–72

    Article  Google Scholar 

  • Scuderi A, Ragonese E, Palmisano G (2009) 24-Ghz ultra-wideband transmitter for vehicular short-range radar applications. IET Circuits Devices Syst 3(6):313–321

    Article  Google Scholar 

  • Shekhar S, Vinoy KJ, Ananthasuresh GK (2017) Surface micromachined capacitive RF switches with low actuation voltage and steady contact. J Microelectromech Syst 26(3):643–652

    Article  Google Scholar 

  • Shekhar S, Vinoy KJ, Ananthasuresh GK (2018) Low-voltage high reliability MEMS switch for millimeter wave 5g applications. J Micromech Microeng 28(7):643–652

    Article  Google Scholar 

  • Van SW (2012) Capacitive RF MEMS switch dielectric charging and reliability: a critical review with recommendations. J Micromech Microeng 22(7)

  • Wong WS, Lai CH (2009) Longer MEMS switch lifetime using novel dual-pulse actuation voltage. IEEE Trans Device Mater Reliab 9(4):569–575

    Article  Google Scholar 

Download references

Acknowledgements

This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). The authors acknowledge Dr Sharath Sriram and the Functional Materials and Microsystems Research Group at RMIT University.

Author information

Authors and Affiliations

  1. Electrical Engineering Department, Sadjad University of Technology, Mashhad, 9188148848, Iran

    Yasser Mafinejad

  2. Electrical Engineering Department, Imam Reza International University, Mashhad, 9138833186, Iran

    Hamid Reza Ansari & Saeed Khosroabadi

Authors
  1. Yasser Mafinejad
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hamid Reza Ansari
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Saeed Khosroabadi
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Saeed Khosroabadi.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mafinejad, Y., Ansari, H.R. & Khosroabadi, S. Development and optimization of RF MEMS switch. Microsyst Technol 26, 1253–1263 (2020). https://doi.org/10.1007/s00542-019-04655-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00542-019-04655-1

Search

Navigation