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Analysis of CMOS 0.18 μm UWB low noise amplifier for wireless application

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Abstract

In this work, a 0.18 μm CMOS LNA is designed which is favorable for a wireless application and the topology used in this design is cascode inductive source degeneration. This proposed LNA is basically designed for ultra-wideband which will be suitable for RF receiver. For an LNA to be in RF receiver, the LNA must be able to amplify very weak signal of – 100 dBm (3.2 uV), must consume very minimum power and lastly, noise generated by LNA must be very small. These requirements are achieved with help of cascode inductive source degeneration topology. This work also presents noise analysis of MOSFET along with LNA’s noise and other parameters analysis. Possible types of topologies are also discussed. The proposed LNA provides a good gain of 19.79 dB, an NF of 2.03 dB, reverse isolation (S12) of − 35.2 dB, input return loss (S11) of − 12.2 dB, and output return loss (S22) of − 12 dB, while consuming 10.8 mW from the supply of 1.8 V. The proposed LNA is simulated in Cadence Spectra using 180 nm UMC technology.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Silchar, India

    Ch. Anandini, F. A. Talukdar & C. L. Singh

  2. Department of Electrical and Electronics Engineering, Katihar Engineering College, Katihar, India

    Ram Kumar

  3. Department of Electronics and Communication Engineering, National Institute of Technology, Trichy, India

    R. Raja

Authors
  1. Ch. Anandini
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  2. F. A. Talukdar
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  3. C. L. Singh
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  4. Ram Kumar
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  5. R. Raja
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Correspondence to Ch. Anandini.

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Anandini, C., Talukdar, F.A., Singh, C.L. et al. Analysis of CMOS 0.18 μm UWB low noise amplifier for wireless application. Microsyst Technol 26, 3243–3257 (2020). https://doi.org/10.1007/s00542-018-4005-0

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