Abstract
Direct bonding of InP dies to Si wafer at low temperature utilizing Al2O3 high-κ dielectric as the interfacial material for homogeneous bonding is reported. The bonding technique is assisted with a UV/Ozone exposure for surface activation and the activation time is optimized for the various intermediate layer thicknesses (5, 10, 20 nm). After the pre-bonding stage, annealing is carried out at 300 °C for 3 h. A bonding interface with minimal interfacial voids is reported for low intermediate layer thickness. The bonding interfaces are examined and a homogeneously bonded interface is shown in the IR images as well as in the FIB micrographs. Additionally a heat transfer simulation is also carried out and the InP/Al2O3–Al2O3/Si bonded structure is shown to closely match the thermal characteristics of a direct bonding approach with no intermediate layer. A high quality bonding interface is revealed along with improved heat dissipation characteristic for Al2O3 interface. Therefore, Al2O3 proves to be an advantageous candidate for its use in potential Si photonic integrated circuits application.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Ben Bakir B, Seassal C, Letartre X et al (2006) Surface-emitting microlaser combining two-dimensional photonic crystal membrane and vertical Bragg mirror. Appl Phys Lett 88:081113–081113–3. doi:10.1063/1.2172730
Ben Bakir B, Descos A, Olivier N et al (2011) Electrically driven hybrid Si/III-V Fabry–Pérot lasers based on adiabatic mode transformers. Opt Express 19:10317–10325
Chong GY, Tan CS (2009) Low temperature PE-TEOS oxide bonding assisted by a thin layer of high-κ dielectric. Electrochem Solid-State Lett 12:H408. doi:10.1149/1.3207872
Chong GY, Tan CS (2011) PE-TEOS wafer bonding enhancement at low temperature with a high-κ dielectric capping layer of Al[sub 2]O[sub 3]. J Electrochem Soc 158:H137. doi:10.1149/1.3507291
Fan J, Anantha P, Liu CY et al (2013) Thermal characteristics of InP-Al2O3/Si low temperature heterogeneous direct bonding for photonic device integration. ECS J Solid State Sci Technol 2:N169–N174. doi:10.1149/2.012309jss
Gösele U, Tong Q-Y (1998) Semiconductor wafer bonding. Annu Rev Mater Sci 28:215–241. doi:10.1146/annurev.matsci.28.1.215
Hirvikorpi T, Vähä-Nissi M, Nikkola J et al (2011) Thin Al2O3 barrier coatings onto temperature-sensitive packaging materials by atomic layer deposition. Surf Coat Technol 205:5088–5092. doi:10.1016/j.surfcoat.2011.05.017
Liang D, Bowers JE, Oakley DC et al (2009) High-quality 150 mm InP-to-silicon epitaxial transfer for silicon photonic integrated circuits. Electrochem Solid-State Lett 12:H101. doi:10.1149/1.3065994
Liang D, Roelkens G, Baets R, Bowers JE (2010) Hybrid integrated platforms for silicon photonics. Materials 3:1782–1802. doi:10.3390/ma3031782
Niklaus F, Stemme G, Lu J-Q, Gutmann RJ (2006) Adhesive wafer bonding. J Appl Phys 99:031101. doi:10.1063/1.2168512
Pasquariello D, Hjort K (2002) Plasma-assisted InP-to-Si low temperature wafer bonding. IEEE J Sel Top Quantum Electron 8:118–131. doi:10.1109/2944.991407
Pasquariello D, Camacho M, Hjort K et al (2001) Evaluation of InP-to-silicon heterobonding. Mater Sci Eng, B 80:134–137. doi:10.1016/S0921-5107(00)00626-7
Tan CS, Reif R (2005) Silicon multilayer stacking based on copper wafer bonding. Electrochem Solid-State Lett 8:G147–G149. doi:10.1149/1.1904506
Tsau CH, Spearing SM, Schmidt MA (2004) Characterization of wafer-level thermocompression bonds. J Microelectromec Syst 13:963–971. doi:10.1109/JMEMS.2004.838393
Acknowledgments
This work was financially supported by the Agency for Science, Technology and Research (A*STAR) with a project #1122804038. Authors are grateful for the support and resources from the Silicon Technologies Center of Excellence (Si-COE). C.S. Tan is affiliated with NOVITAS (Nanoelectronics Centre of Excellence) at NTU.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Anantha, P., Tan, C.S. UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding. Microsyst Technol 21, 1015–1020 (2015). https://doi.org/10.1007/s00542-015-2432-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00542-015-2432-8