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Investigations of silicon wafer bonding utilizing sputtered Al and Sn films

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Abstract

Nowadays, wafer bonding is becoming a key enabling technology for three-dimensional (3D) packaging, micro-electro-mechanical systems (MEMS) encapsulation and heterogeneous integration. This paper develops and investigates entire Si wafer bonding based on thin Al and Sn films. 500 nm-thick Al and 500 nm-thick Sn films are sputtered onto silicon wafers. At bonding temperature of 280 °C, the average shear strength of 11 MPa is achieved at bonding time of 1 min. The dependence of shear strength and fracture surface morphology on bonding temperature and bonding time is illustrated. The physical mechanism is proposed. It indicates that high bonding strength can be achieved at appropriate low bonding temperature with proper short bonding time.

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Acknowledgments

The work presented is funded by Major State Basic Research Development Program of China (Project No. 2015CB057201), National Science and Technology Major Project of China (Project No. 2013ZX02501), and National Science and Technology Major Project of China (Project No. 2009ZX02038-02). Zhiyuan Zhu would like to thank the China Scholarship Council for Fellowship support.

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Authors and Affiliations

  1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, No. 5 Yiheyuan Road Haidian District, Beijing, 100871, People’s Republic of China

    Zhiyuan Zhu, Min Yu & Yufeng Jin

  2. School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, USA

    Zhiyuan Zhu

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  1. Zhiyuan Zhu
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  2. Min Yu
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  3. Yufeng Jin
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Correspondence to Min Yu.

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Zhu, Z., Yu, M. & Jin, Y. Investigations of silicon wafer bonding utilizing sputtered Al and Sn films. Microsyst Technol 23, 929–933 (2017). https://doi.org/10.1007/s00542-016-2982-4

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  • DOI: https://doi.org/10.1007/s00542-016-2982-4

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