Abstract
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
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Acknowledgments
The authors wish to extend their thanks for the support provided by the Ibnu Sina Institute, Universiti Teknologi Malaysia, Malaysia and Nano-Optoelectronics Laboratory, Universiti Sains Malaysia, Malaysia. This work was supported by the Ministry of Science, Technology and Innovation under Science-Fund Grant 03-01-06-SF0277, Malaysia government. We wish to thank our colleagues for useful discussions, particularly, Assoc. Prof. Dr Azlan Abdul Aziz, Assoc. Prof. Dr Md Roslan Hashim at Universiti Sains Malaysia, Malaysia, Assoc. Prof. Dr Zulkafli Othman at Universiti Teknologi Malaysia, Malaysia and Assoc. Prof Dr Zhang Dao Hua at Nanyang Technological University, Singapore.
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Mustafa, F., Parimon, N., Hashim, A.M. et al. RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems. Microsyst Technol 16, 1713–1717 (2010). https://doi.org/10.1007/s00542-010-1099-4
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DOI: https://doi.org/10.1007/s00542-010-1099-4