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Design, simulation, fabrication, packaging and testing of an AlGaAs/GaAs Gunn diode at 94 GHz

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Abstract

An AlGaAs/GaAs heterostructure Gunn diode was designed, simulated and fabricated at 94 GHz. First, the Gunn diode was simulated by using SILVACO in vertical mode. Thereafter, it was fabricated by using Cl2-based dry etching, metallization and MESA etching with controlled anode diameters. Current-voltage measurements were performed on the fabricated Gunn diode at room temperature, and the results closely matched with the results of the simulation. The current oscillation with transit time was simulated and found to be a coherent oscillation at ~100 GHz. The peak current increased from 0.63 to 0.86 A and the oscillation amplitude increased from 75.21 to 98.09 mA as the diameter of the anode was increased from 62 to 70 μm while the threshold voltage was observed to be constant at ~2.9 V. The simulation results were observed to be in good agreement with the experiment results.

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Authors and Affiliations

  1. Semiconductor Materials and Device laboratory, Department of Semiconductor Science, Dongguk University-Seoul, Seoul, 100715, Korea

    Sanjeev K. Sharma & Deuk Young Kim

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  1. Sanjeev K. Sharma
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  2. Deuk Young Kim
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Correspondence to Sanjeev K. Sharma.

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Sharma, S.K., Kim, D.Y. Design, simulation, fabrication, packaging and testing of an AlGaAs/GaAs Gunn diode at 94 GHz. Journal of the Korean Physical Society 67, 619–624 (2015). https://doi.org/10.3938/jkps.67.619

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  • DOI: https://doi.org/10.3938/jkps.67.619

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