Skip to main content
Log in

Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes

  • Technical Paper
  • Published:
Microsystem Technologies Aims and scope Submit manuscript

Abstract

This article describes the fabrication of polymer structures with lateral dimensions in the sub-micron regime using hard X-rays (λc ≈ 0.4 nm) from the electron storage ring ANKA. Spincoated polymethylmethacrylate (PMMA) grades have been analyzed with respect to development rates and contrast. The contrast has been determined to be constant over a wide dose regime but rapidly decreases for dose values below 1 kJ/cm3. Films with a thickness from 2 to 11 μm have been patterned using a high resolution X-ray mask consisting of 2 μm thick gold absorbers on a suspended 1 μm thick silicon nitride membrane. The fabrication of sub-micron X-ray lithography structures with feature sizes down to 400 nm is confined by the mechanical parameters of the resist material and the process conditions. Surface tension after development limits the achievable aspect ratio of isolated pillars and walls, depending on the actual resist height. PMMA structures have been successfully used as template for electroplating of 1 μm thick gold to demonstrate the fabrication capability of sub-micron scale metal parts.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  • Achenbach S, Mohr J, Pantenburg FJ (2000) Application of Scanning Probe Microscopy for the determination of the structural accuracy of high aspect ratio microstructures. Microelectron Eng 53:637–640

    Article  Google Scholar 

  • Achenbach S (2004) Deep sub micron high aspect ratio polymer structures produced by deep X-ray lithography. Microsyst Technol 10(6–7):493–497

    Article  Google Scholar 

  • Achenbach S, Mappes T, Fettig R, Kando J, Mohr J (2004a) Process conditions for the fabrication of sub-wavelength scale structures by X-ray lithography in PMMA films. Proc SPIE 5450:86–94

    Google Scholar 

  • Achenbach S, Mappes T, Mohr J (2004b) Structure quality of high aspect ratio sub micron polymer structures patterned at the electron storage ring ANKA. J Vac Sci Tech B 22(6):3196–3201

    Article  Google Scholar 

  • Becker EW, Ehrfeld W, Hagmann P, Maner A, Münchmeyer D (1986) Fabrication of microstructures with high aspect ratios and great structural heights by synchrotron radiation lithography, galvanoforming and plastic moulding (LIGA process). Microelectron Eng 4:36

    Article  Google Scholar 

  • Cuisin C et al (1999) Fabrication of three-dimensional microstructures by high resolution X-ray lithography. J Vac Sci Technol B 17:3444–3448

    Article  Google Scholar 

  • Deguchi K, Miyoshi K et al (1992) Application of X-ray lithography with a single layer resist process to subquartermicron large scale integrated circuit fabrication. J Vac Sci Technol B 10:3145–3149

    Article  Google Scholar 

  • Di Fabricio E, Fillipo R, Cabrini S, Kumar R, Perennes F et al (2004) X-ray lithography for micro & nano fabrication at ELETTRA for interdisciplinary applications. J Phys Condens Matter 16:3517–3535

    Article  Google Scholar 

  • Fettig R, Hein H, Schulz J (2003) High aspect ratio hole array filters for a wide range of wavelength. In: international workshop on thermal detectors for space-based applications (TDW2003), Washington, USA

  • Ghica V, Glashauser W (1982) Verfahren für die spannungsrißfrei Entwicklung von bestrahlten Polymethylmethacrylat-Schichten. German Patent No. 3 039 110

  • John S (1987) Strong localization of photons in certain distorted dielectric superlattices. Phys Rev Lett 58:2486–2489

    Article  Google Scholar 

  • Liguda C, Böttger G, Eich M et al (2001) Polymer photonic crystal slab waveguides. Appl Phys Lett 78:2434–2436

    Article  Google Scholar 

  • Pantenburg FJ, Achenbach S, Mohr J (1998a) Characterisation of defects in very high deep-etch X-ray lithography microstructures. Microsystem Tech 4(2):89–94

    Article  Google Scholar 

  • Pantenburg FJ, Achenbach S, Mohr J (1998b) Influence of developer temperature and resist material on the structure quality in deep X-ray lithography. J Vac Sci Technol B 16:3547–3551

    Article  Google Scholar 

  • Reynolds G, Taylor J (1999) Direct measurement of X-ray mask sidewall roughness and its contribution on the overall sidewall roughness of chemically amplified resist features. J Vac Sci Technol B 17:3420–3425

    Article  Google Scholar 

  • Schomburg W, Bley P, Hein H, Mohr J (1990) Masken für die Röntgentiefenlithographie. VDI Berichte 870:133–154

    Google Scholar 

  • Vladimirsky O, Leonard Q et al (1999) Sub-100nm imaging in X-ray lithography. Proc SPIE 3676:478–484

    Google Scholar 

  • Weibel GL, Ober CK (2002) An overview of supercritical CO2 applications in microelectronics processing. Microelectron Eng 65:145–152

    Article  Google Scholar 

  • White V, Cerrina F (1992) Metal-less X-ray phase shift masks for nanolithography. J Vac Sci Technol B 10:3141–3144

    Article  Google Scholar 

  • Yablonovitch E (1987) Inhibited spontaneous emission in solid-state physics and electronics. Phys Rev Lett 58:2059–2062

    Article  Google Scholar 

  • Yang L, Khan M, Taylor JW, Vladimirsky Y, Dandekar NV (2000) A processing latitude study of X-ray phase shifting masks. Proc SPIE 3997:530–538

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Timo Mappes.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mappes, T., Achenbach, S. & Mohr, J. Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes. Microsyst Technol 13, 355–360 (2007). https://doi.org/10.1007/s00542-006-0182-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00542-006-0182-3

Keywords

Navigation