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A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET

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Abstract

In this letter, we have explored the effect of metal strip (MS) approach on electrically doped tunnel field effect transistor (ED-TFET) in the presence of hetero-material (HM) and named the proposed device as hetero-material metal strip electrically doped tunnel FET (HM–MS–ED-TFET). Intention of our work is to suppress the ambipolar current and improve the device electronic characteristics; for this, we have considered MS at drain channel (D/C) region where energy band becomes wider which helps in suppression the ambipolarity and HM is considered at source region which will reduce the tunneling barrier width and increase the tunneling area at source channel (S/C) which helps to improve the ON current and other device performance. To support our work and make things easily understandable, we have added an optimization part for HM and MS. Overall, the proposed device can be useful for higher frequency and low-circuit applications. All simulated results are carried out using 2-D ATLAS software.

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Authors and Affiliations

  1. PDPM-India Institute of Information Technology Design and Manufacturing, Jabalpur, MP, India

    Bandi Venkata Chandan & Dheeraj Sharma

  2. Jaypee Institute of Information Technology, Noida, India

    Kaushal Nigam & Vinay Anand Tikkiwal

Authors
  1. Bandi Venkata Chandan
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  2. Kaushal Nigam
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  3. Dheeraj Sharma
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  4. Vinay Anand Tikkiwal
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Correspondence to Bandi Venkata Chandan.

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Chandan, B.V., Nigam, K., Sharma, D. et al. A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET. Appl. Phys. A 125, 81 (2019). https://doi.org/10.1007/s00339-019-2378-2

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