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Thickness-dependent magnetic and transport properties of La0.5Sr0.5MnO3 thin films deposited by DC magnetron sputtering on the LaAlO3 substrate

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Abstract

Thickness-dependent structural, magnetic and transport properties of La0.5Sr0.5MnO3 (LSMO) thin films have been studied. A series of the LSMO films with thickness 30, 60, 125 and 300 nm have been deposited on the LaAlO3 substrate using DC magnetron sputtering. The paramagnetic to ferromagnetic transition at T C is followed by antiferromagnetic ordering at T N in all films. It is also found that all LSMO films have T C lower than that of bulk LSMO. A small variation of T C is observed on increasing the film thickness. However, T N is found to rise with increase in the film thickness. The 60 nm-thick film shows a wide insulator to metal transition. The resistivity above 240 K of the films with various thicknesses is consistent with a small polaronic hopping conductivity. The polaronic formation energy E A rises with the increase of the film thickness except for 60 nm thin film, where a small decline in E A is observed. The correlation between observed structural, magnetic and electrical properties with the thickness of the films has been discussed in this paper.

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Acknowledgements

Kamlesh Yadav is grateful to the Ministry of Human Resources and Development (MHRD), New Delhi, for the award of a fellowship during the doctoral program.

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  1. K. Yadav

    Present address: Department of Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, 151001, India

Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology, Roorkee, 247667, India

    K. Yadav & G. D. Varma

  2. National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi, 110012, India

    H. K. Singh & K. K. Maurya

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Yadav, K., Singh, H.K., Maurya, K.K. et al. Thickness-dependent magnetic and transport properties of La0.5Sr0.5MnO3 thin films deposited by DC magnetron sputtering on the LaAlO3 substrate. Appl. Phys. A 124, 66 (2018). https://doi.org/10.1007/s00339-017-1494-0

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