Abstract
Zinc oxide (ZnO) is a promising material in a variety of applications including sensors, transistors and solar cells. Many researchers studied N-type ZnO films and reported enhanced properties. On the other hand, P-type ZnO films were rarely attempted due to the self-compensation effect. Success in achieving P-type ZnO films is important as it will pave the way for more advanced complementary devices. In this work, P-type sodium and potassium doped ZnO films were fabricated on glass substrates with doping concentration between 0 and 25 at.%. The influences of doping concentration on surface morphology, structural, optical and electrical properties were investigated using atomic force microscopy, X-ray diffraction spectroscopy, energy-dispersive X-ray spectroscopy, ultraviolet–visible (UV–Vis) spectrophotometer, photoluminescence spectroscopy and Hall-effect electrical transport measurement system. The distinctive behavior of P-type ZnO films with different doping concentrations will be discussed.
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Acknowledgements
This research work was funded by the Malaysian Ministry of Higher Education (MoHE)’s Fundamental Research Grant Scheme (FRGS Phase 1/2014, Project ID: 1/2014/TK03/MMU/02/1). We would like to thank MoHE for financially supporting this project.
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Au, B.WC., Chan, KY. Sodium and potassium doped P-type ZnO films by sol-gel spin-coating technique. Appl. Phys. A 123, 485 (2017). https://doi.org/10.1007/s00339-017-1099-7
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DOI: https://doi.org/10.1007/s00339-017-1099-7