Skip to main content
SpringerLink
Log in

Photoluminescence of ZnO:Ga Thin Films Fabricated by Pulsed Laser Deposition Technique

  • Published:
Journal of Electroceramics Aims and scope Submit manuscript

Abstract

Highly c-axis oriented Ga-doped ZnO films (GZO) have been grown on sapphire (0001) substrates by pulsed laser deposition (PLD) method. Photoluminescence (PL) spectra indicate that Ga atoms have a large effect on the luminescent properties of ZnO films. PL spectra of GZO films show near band edge (NBE) emissions and broad orange deep-level emissions. The NBE emission shifts to higher energy region and the intensity decreases with the increase of Ga concentration. The blue shift of NBE emission results from Burstein-Moss effect. The quenching of NBE emission is ascribed to the noradiative recombination. The orange emission is related to the oxygen vacancies.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • K. Minegishi, Y. Koiwa, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., 36, L1453 (1997).

    Google Scholar 

  • Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, and H.W. White, J. Cryst. Growth, 216, 330 (2000).

    Google Scholar 

  • T. Yamamoto and H.K. Yoshida, Jpn. J. Appl. Phys., 38, L166 (1999).

    Google Scholar 

  • S.B. Zhang, S.H. Wei, and Alex Zunger, Phys. Rev. B, 63, 075205 (2001).

    Article  Google Scholar 

  • M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., 38, L1205 (1999).

    Google Scholar 

  • Kohiki, M. Nishitani, and T. Wada, J. Appl. Phys., 75, 2069 (1994).

    Google Scholar 

  • G.A. Hirata, J. Mckittrick, J. Siqueiros, A. Lopez, T. Cheeks, O. Contreras, and J.Y. Yi, J. Vac. Sci. Technol. A, 14, 791 (1996).

    Google Scholar 

  • H. Hirasawa, M. Yoshida, S. Nakamura, Y. Suzuki, S. Okada, and K. Kondo, Sol. Energy Mater.& Sol. Cells, 67, 231 (2001).

    Google Scholar 

  • H. Kato, M. Sano, K. Miyamoto, and T. Yao, J. Cryst. Growth, 237–239, 538 (2002).

    Google Scholar 

  • J. Cho, J.B. Nah M.S. Oh J.H. Song K.H. Yoon H.J. Jung W.K. Choi Jpn. J. Appl. Phys., 40, L1040 (2001).

    Google Scholar 

  • A.P. Roth, J.B. Webb, and D.F. Williams, Phys. Rev., 25, 7836 (1982).

    Google Scholar 

  • E. Burstein, Phys. Rev., 25, 7826 (1982).

    Google Scholar 

  • D. Auvergne, J. Camassel, and H. Mathieu, Phys. Rev. B, 6, 2251 (1975).

    Google Scholar 

  • J.C. Tsang, P.J. Dean, and P.T. Landsberg, Phys. Rev., 173, 814 (1968).

    Google Scholar 

  • N.K. Dutta and R.J. Nelson, J. Appl. Phys., 53, 74 (1982).

    Google Scholar 

  • D.J. Jang, M.E. Flatte, C.H. Grein, J.T. Olesberg, T.C. Hasenberg, and T.F. Boggess, Phys. Rev. B, 58, 13047 (1998).

    Google Scholar 

  • V.I. Klimov, A.A. Mikhailovsky, D.W. McBranch, C.A. Leatherdale, and M.G. Bawendi, Science, 287, 1011 (2000).

    Article  CAS  PubMed  Google Scholar 

  • V. Swaminathan, A.T. Macrander, Materials Aspects of GaAs and InP Based Structures (Prentice-Hall, New Jersey, 1982), p. 319.

    Google Scholar 

  • D.C. Reynolds, D.C. Look, and B. Jogni, Solid State Commun., 101, 643 (1997).

    Article  Google Scholar 

  • S.A. Studenikin, N. Golego, M. Cocivera, J. Appl. Phys., 84, 2287 (1998).

    Article  Google Scholar 

  • A. Ortiz, C. Falcony, J. Hernandez, M. Garcia, and J.C. Alonso, Thin Solid Films, 293, 103 (1997).

    Google Scholar 

  • B.S. Pierce and R.L. Hengehold, J. Appl. Phys., 47, 644 (1976).

    Google Scholar 

  • F.K. Shan, B.C. Shin, S.C. Kim, and Y.S. Yu, J. Korean. Phys. Soc., 42, S1374 (2003).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electronic Ceramics Center, Dongeui University, Busan, 614-714, Korea

    Z. F. Liu, F. K. Shan & J. Y. Sohn

  2. RIBS and Department of Physics, Dongeui University, Busan, 614-714, Korea

    J. Y. Sohn, S. C. Kim & J. Y. Sohn

  3. Department of Urban Engineering, Dongeui University, Busan, 614-714, Korea

    G. Y. Kim

  4. The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai, 200050, People’s Republic of China

    Z. F. Liu & Y. X. Li

Authors
  1. Z. F. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. K. Shan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Y. Sohn
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. C. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. G. Y. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Y. X. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. Y. Sohn
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. Y. Sohn.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Liu, Z.F., Shan, F.K., Sohn, J.Y. et al. Photoluminescence of ZnO:Ga Thin Films Fabricated by Pulsed Laser Deposition Technique. J Electroceram 13, 183–187 (2004). https://doi.org/10.1007/s10832-004-5096-9

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10832-004-5096-9

Keywords

Search

Navigation