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Low-power phase change memory with multilayer TiN/W nanostructure electrode

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Abstract

In this paper, multilayer TiN/W with interfacial nanostructure is used as electrode for application in low-power phase change memory (PCM). Compared with single-layer electrode, multilayer electrode has much lower thermal conductive due to the interfacial scattering effect. PCM based on multilayer electrode with different thickness ratio of TiN and W was fabricated and characterized. The device properties including operation voltage and endurance depended critically on the multilayer structure rather than the thickness ratio of TiN and W. The low operation voltage and long cycle life of multilayer-electrode-based PCM result from the increase in overall thermal resistance due to the low thermal conductivity of multilayer electrode.

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Acknowledgments

This work is supported by National Science Foundation of China (Grant Nos. 61306147, 61377061) and sponsored by K. C. Wong Magna Fund in Ningbo University.

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Authors and Affiliations

  1. Faculty of Information Science and Engineering, Ningbo University, Ningbo, 315211, China

    Yegang Lu, Xiang Shen, Guoxiang Wang & Shixun Dai

  2. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Sannian Song, Zhitang Song & Liangcai Wu

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  1. Yegang Lu
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  2. Sannian Song
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  7. Shixun Dai
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Correspondence to Yegang Lu.

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Lu, Y., Song, S., Shen, X. et al. Low-power phase change memory with multilayer TiN/W nanostructure electrode. Appl. Phys. A 117, 1933–1940 (2014). https://doi.org/10.1007/s00339-014-8660-4

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