Abstract
GaN epitaxial layers were implanted by 100 keV H+ ions at different implantation temperatures (LN2, RT and 300 °C) with a fluence of 2.5×1017 cm−2. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted surface revealed the formation of surface blistering in the as-implanted samples at 300 °C and after annealing at higher temperature for the implantation at LN2 and RT. The physical dimensions of the surface blisters/craters were dependent on the implantation temperature. XRD showed the dependence of damage-induced stress on the implantation temperature with higher stress for the implantation at 300 °C. TEM investigations revealed the formation of a damage band in all the cases. The damage band was filled with large area microcracks for the implantation at 300 °C, which were responsible for the as-implanted surface blistering.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
O. Moutanabbir, R. Scholz, U. Gösele, A. Guittoum, M. Jungmann, M. Butterling, R.K. Rehberg, W. Anwand, W. Egger, P. Sperr, Phys. Rev. B 81, 115205 (2010)
H.J. Woo, H.W. Choi, W. Hong, J.H. Park, C.H. Eum, Surf. Coat. Technol. 203, 2375 (2009)
R. Singh, I. Radu, U. Gösele, S. Christiansen, Phys. Status Solidi C 3, 1754 (2006)
M. Bruel, Electron. Lett. 31, 1201 (1995)
U. Dadwal, A. Kumar, R. Scholz, M. Reiche, P. Kumar, G. Boehm, M.C. Amann, R. Singh, Semicond. Sci. Technol. 26, 085032 (2011)
O. Moutanabbir, U. Gösele, J. Electron. Mater. 39, 482 (2010)
I. Radu, R. Singh, R. Scholz, U. Gösele, S. Christiansen, G. Brüderl, C. Eichler, V. Härle, Appl. Phys. Lett. 89, 031912 (2006)
E. Padilla, M. Jackson, M.S. Goorsky, ECS Trans. 33, 263 (2010)
O. Moutanabbir, S. Senz, R. Scholz, S. Christiansen, M. Reiche, A. Avramescu, U. Strauss, U. Gösele, Electrochem. Solid-State Lett. 12, H105 (2009)
P. Kumar, G. Rodrigues, P.S. Lakshmy, D. Kanjilal, B.P. Singh, R. Kumar, Nucl. Instrum. Methods Phys. Res., Sect. B, Beam Interact. Mater. Atoms 252, 354 (2006)
J.D. Plummer, D.D. Michael, B.P. Griffin, Silicon VLSI Technology (Prentice-Hall, Englewood Cliffs, 2000)
U. Littmark, J.F. Ziegler, Phys. Rev. A 23, 64 (1981)
J.K. Lee, M. Nastasi, N.D. Theodore, A. Smalley, T.L. Alford, J.W. Mayer, M. Cai, S.S. Lau, J. Appl. Phys. 96, 280 (2004)
J.K. Lee, Y. Lin, Q.X. Jia, T. Höchbauer, H.S. Jung, L. Shao, A. Misra, M. Nastasi, Appl. Phys. Lett. 89, 101901 (2006)
C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z.L. Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, Phys. Rev. B 54, 17745 (1996)
M. Nastasi, T. Höchbauer, J.K. Lee, A. Misra, J.P. Hirth, M. Ridgway, T. Lafford, Appl. Phys. Lett. 86, 154102 (2005)
C. Coupeau, E. Dion, M.L. David, J. Colin, J. Grilhé, Europhys. Lett. 92, 16001 (2010)
Acknowledgements
This work is supported financially by the Max Planck Society (MPS), Germany, under the cooperation scheme of the Max Planck India Partner Group. The authors would like to thank Mrs. S. Hopfe from Max Planck Institute of Microstructure Physics, Halle, Germany, for cross-sectional TEM specimen preparation. Dr. D. Kanjilal is gratefully acknowledged for his help and cooperation during the ion implantation work. Ms. B. Sweta is thanked for helpful discussion related to AFM measurements. U. Dadwal is thankful to the MPS, Germany, for the Research Fellowship.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Dadwal, U., Scholz, R., Reiche, M. et al. Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN. Appl. Phys. A 112, 451–456 (2013). https://doi.org/10.1007/s00339-012-7429-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-012-7429-x