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Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

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Abstract

SnO2 thin films grown on glass substrates at 300 ∘C by reactive thermal evaporation and annealed at 600 ∘C were irradiated by 120 MeV Ag9+ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×1012 ions cm−2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×1011 ions cm−2 to 1×1013 ions cm−2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×1012 ions cm−2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.

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Acknowledgements

The authors sincerely thank IUAC for the project UFUP-48314. The authors express their sincere thanks to the pelletron group, Mr. S. Ohja, and the Materials Science Group, Inter University Accelerator Centre, New Delhi, India, for their help during the experiment.

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Authors and Affiliations

  1. PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamilnadu, 641029, India

    K. M. Abhirami, P. Matheswaran, B. Gokul & R. Sathyamoorthy

  2. Materials Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    K. Asokan

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  1. K. M. Abhirami
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  2. P. Matheswaran
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  3. B. Gokul
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  4. R. Sathyamoorthy
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  5. K. Asokan
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Correspondence to R. Sathyamoorthy.

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Abhirami, K.M., Matheswaran, P., Gokul, B. et al. Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films. Appl. Phys. A 111, 1175–1180 (2013). https://doi.org/10.1007/s00339-012-7337-0

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  • DOI: https://doi.org/10.1007/s00339-012-7337-0

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