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p-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films

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Abstract

p-type nitrogen-doped SnO2 (SnO2:N) films were grown by thermal processing of amorphous tin nitride films at temperatures between 350 and 500 ∘C in flowing O2–Ar gas mixture. From high-resolution X-ray photoelectron spectroscopy (XPS) and X-ray diffraction patterns, it is deduced that the N atoms replace the O atoms in the SnO2 lattice. The N dopant is more tightly bound in SnO2:N at higher thermal oxidation temperatures deduced from the XPS results. The hole concentration obtained at an oxidation temperature of 400 ∘C is 1.87×1019 cm−3, which is dramatically enhanced compared to previous reports. Our results indicate that the high-temperature thermal oxidation of tin nitride is a facile and effective route to alleviate the self-compensation effect, reduce the content of γ-N2 double donors, and reinforce the stability of N dopant in the SnO2:N films.

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Acknowledgements

This work was financially supported by the Foundation of the President of the Hefei Institute of Physical Sciences of the Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 11004197), and ‘Hong Kong Scholars Program’ (Grant No. XJ2011039).

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Authors and Affiliations

  1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, PR China

    S. S. Pan, S. Wang, Y. X. Zhang, Y. Y. Luo, F. Y. Kong, S. C. Xu, J. M. Xu & G. H. Li

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  1. S. S. Pan
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  2. S. Wang
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Correspondence to S. S. Pan.

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Pan, S.S., Wang, S., Zhang, Y.X. et al. p-type conduction in nitrogen-doped SnO2 films grown by thermal processing of tin nitride films. Appl. Phys. A 109, 267–271 (2012). https://doi.org/10.1007/s00339-012-7288-5

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