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Preparation and characterization of nitrogen-incorporated SnO2 films

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Abstract

Nitrogen-incorporated SnO2 thin films have been grown on Si(100) and quartz substrates by reactive sputtering of a Sn target in gas mixtures of N2–O2. The structure of the nitrogen-incorporated SnO2 thin films was studied by X-ray diffraction, and the changes in the chemical bonds and atomic binding states of the nitrogen-incorporated SnO2 thin films were analyzed by X-ray photoelectron spectroscopy. It was found that the binding energy of Sn 3d and O 1s shifts 0.65 eV and 0.35 eV, respectively, toward the lower-energy side after nitrogen was incorporated into the SnO2 thin films as a comparison with that of pure SnO2 film. The indirect optical band gap gradually decreases from 3.42 eV to 3.23 eV, i.e. from the UV to the edge of the visible-light range, with increasing nitrogen flux content in the N2–O2 gas mixtures.

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Authors and Affiliations

  1. Anhui Key Laboratory of Nanomaterial and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P.R. China

    S.S. Pan, C. Ye, X.M. Teng, H.T. Fan & G.H. Li

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  1. S.S. Pan
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  2. C. Ye
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  3. X.M. Teng
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  4. H.T. Fan
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  5. G.H. Li
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Correspondence to G.H. Li.

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PACS

81.15.Cd; 78.20.-e; 68.37.Xy; 81.05.Je

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Pan, S., Ye, C., Teng, X. et al. Preparation and characterization of nitrogen-incorporated SnO2 films. Appl. Phys. A 85, 21–24 (2006). https://doi.org/10.1007/s00339-006-3659-0

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