Abstract
Cubic AlN films were successfully deposited on TiN buffered Si (100) substrates by a laser molecular beam epitaxy (LMBE) technique, and their crystal structure and optical and electrical properties were studied. The results indicate that cubic AlN films show the NaCl-type structure with a (200) preferred orientation, and the lattice parameter is determined to be 0.4027 nm. The Fourier transform infrared (FTIR) pattern of the cubic AlN film displays sharp absorption peaks at 668 cm−1 and 951 cm−1, corresponding to the transverse and longitudinal optical vibration modes. Ellipsometric measurements evidence a refractive index of 1.66–1.71 and an extinction coefficient of about zero for the cubic AlN film in the visible range. Capacitance–voltage (C–V) traces of the metal–insulator–semiconductor (MIS) device exhibit that the cubic AlN film has a dielectric constant of 8.1, and hysteresis in the C–V traces indicates a significant number of charge traps in the film.
Similar content being viewed by others
References
I. Petrov, E. Mojab, R.C. Powell, J.E. Greene, L. Hultman, J.E. Sundgren, Appl. Phys. Lett. 60, 2491 (1992)
M.P. Thompson, G.W. Auner, A.R. Drews, J. Electron. Mater. 10, L17 (1999)
L.D. Wang, H.S. Kwok, Appl. Surf. Sci. 154–155, 439 (2000)
M. Shahien, M. Yamada, T. Yasui, M. Fukumoto, J. Therm. Spray Technol. 19, 635 (2010)
Z.M. Ren, Y.F. Lu, H.Q. Ni, J. Appl. Phys. 88, 7346 (2000)
S. Mohri, T. Yoshitake, T. Hara, K. Nagayama, Diam. Relat. Mater. 17, 1796 (2008)
S. Okubo, N. Shibata, T. Saito, Y. Ikuhara, J. Cryst. Growth 189–190, 452 (1998)
M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As, J. Appl. Phys. 106, 076104 (2009)
G. Shukla, A. Khare, Appl. Surf. Sci. 255, 2057 (2008)
Y.K. Ke, H.R. Dong, Handbook of Chemical Analysis (Chemical Industry Press, Beijing, 1998)
L.I. Wei, C.J. Fang, Appl. Surf. Sci. 253, 7019 (2007)
M. Bernard, A. Deneuville, O. Thomas, P. Gergaud, P. Sandstrom, J. Birch, Thin Solid Films 380, 252 (2000)
C. Ristoscu, C. Ducu, G. Socol, F. Craciunoiu, I.N. Mihailescu, Appl. Surf. Sci. 248, 411 (2005)
J. Baek, J. Ma, M.F. Becker, J.W. Keto, D. Kovar, Thin Solid Films 515, 7096 (2007)
P.E. Silva, P.R. De, L.C. Carvalho, Microelectron. J. 34, 721 (2003)
Acknowledgements
This work was financially supported by the Open Foundation of the Key Laboratory of New Processing Technology for Nonferrous Metals and Materials (No. GXKFZ-05) and the Guangxi High Education Scientific Research Project (No. 200103YB003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Fu, Y., Li, X., Wang, Y. et al. Structural, optical and electrical properties of cubic AlN films deposited by laser molecular beam epitaxy. Appl. Phys. A 106, 937–940 (2012). https://doi.org/10.1007/s00339-011-6713-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-011-6713-5