Skip to main content

Advertisement

SpringerLink
Log in

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switching and retention characteristics of memristive SrTiO3 Schottky devices. Numerical simulations suggest that, though ionic motion results in switching, it is not possible to meet the criteria of fast switching and long retention simultaneously; conditions that lead to sufficiently fast switching also lead to unacceptably fast decays of programmed states. However, an operational window is found when a term accounting for local enhancement of electric field in the dielectric is included. A discussion of the appropriateness of this inclusion is provided.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. Strukov, G. Snider, D. Stewart, S. Williams, Nature 431, 80–83 (2008)

    Article  ADS  Google Scholar 

  2. A. Sawa, Mater. Today 11, 28–36 (2008)

    Article  Google Scholar 

  3. J.J. Yang, J. Borghetti, D. Murphy, D.R. Stewart, R.S. Williams, Adv. Mater. 21, 3754–3758 (2009)

    Article  Google Scholar 

  4. K. Jung, J. Choi, Y. Kim, H. Im, S. Seo, R. Jung, D.C. Kim, J.S. Kim, B.H. Park, J.P. Hong, J. Appl. Phys. 103, 034504 (2008)

    Article  ADS  Google Scholar 

  5. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429–433 (2008)

    Article  Google Scholar 

  6. C. Yoshida, K. Tsunoda, H. Noshiro, Y. Sugiyama, Appl. Phys. Lett. 91, 223510 (2007)

    Article  ADS  Google Scholar 

  7. S. Muraoka, K. Osano, Y. Kanzawa, S. Mitani, S. Fujii, K. Katayama, Y. Katoh, Z. Wei, T. Mikawa, K. Arita, Y. Kawashima, R. Azuma, K. Kawai, K. Shimakawa, A. Odagawa, T. Takagi, Tech. Dig., Int. Electron Devices Meet. 779–782 (2007)

  8. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632–2663 (2009)

    Article  Google Scholar 

  9. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312–320 (2006)

    Article  ADS  Google Scholar 

  10. J. Blanc, D.L. Staebler, Phys. Rev. B 4, 3548–3557 (1971)

    Article  ADS  Google Scholar 

  11. D.B. Strukov, J.L. Borghetti, R.S. Williams, Small 5, 1058–1063 (2009)

    Article  Google Scholar 

  12. D.B. Strukov, R.S. Williams, Appl. Phys. A 94, 515–519 (2009)

    Article  ADS  Google Scholar 

  13. S.H. Jeon, B.H. Park, J.C. Lee, B.R. Lee, S.W. Han, Appl. Phys. Lett. 89, 042904 (2006)

    Article  ADS  Google Scholar 

  14. H. Shima, N. Zhong, H. Akinaga, Appl. Phys. Lett. 94, 082905 (2009)

    Article  ADS  Google Scholar 

  15. W. Jiang, D. Evans, J.A. Bain, M. Skowronski, P.A. Salvador, Appl. Phys. Lett. 96, 092102 (2010)

    Article  ADS  Google Scholar 

  16. R. Moos, W. Menesklou, K.H. Häerdtl, Appl. Phys. A 61, 389–395 (1995)

    Article  ADS  Google Scholar 

  17. J. Maier, Physical Chemistry of Ionic Materials (Wiley, Chichester, 2004)

    Book  Google Scholar 

  18. S.A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser, Appl. Phys. Lett. 77, 1662–1664 (2000)

    Article  ADS  Google Scholar 

  19. G.M. Choi, H.L. Tuller, D. Goldschmidt, Phys. Rev. B 34, 6972–6979 (1986)

    Article  ADS  Google Scholar 

  20. R. Waser, T. Baiatu, K.-H. Härdtl, J. Am. Ceram. Soc. 73, 1654–1662 (1990)

    Article  Google Scholar 

  21. C.R. Crowell, V.V.L. Rideout, Solid-State Electron. 12, 89–105 (1969)

    Article  ADS  Google Scholar 

  22. H.-M. Christen, J. Mannhart, E.J. Williams, Ch. Gerber, Phys. Rev. B 49, 12095–12104 (1994)

    Article  ADS  Google Scholar 

  23. H. Yamada, G.R. Miller, J. Solid State Chem. 6, 169–177 (1973)

    Article  ADS  Google Scholar 

  24. K.G. Rajan, P. Parameswaran, J. Janaki, T.S. Radhakrishnan, J. Phys. D, Appl. Phys. 23, 694–697 (1990)

    Article  ADS  Google Scholar 

  25. H.B. Huntington, A.R. Grone, J. Phys. Chem. Solids 20, 76–87 (1961)

    Article  ADS  Google Scholar 

  26. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, IEEE Trans. Electron Devices 56, 193–200 (2009)

    Article  ADS  Google Scholar 

  27. D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-I. Chung, J.T. Moon, B.I. Ryu, Appl. Phys. Lett. 88, 202102 (2006)

    Article  ADS  Google Scholar 

  28. L.A. Errico, G. Fabricius, M. Rentería, P. de la Presa, M. Forker, Phys. Rev. Lett. 89, 055503 (2002)

    Article  ADS  Google Scholar 

  29. J.W. McPherson, J. Kim, A. Shanware, H. Mogul, J. Rodriguez, IEEE Trans. Electron Devices 50(8), 1771–1778 (2003)

    Article  ADS  Google Scholar 

  30. A.B. Lidiard, Handb. Phys. 20, 246349 (1957)

    Google Scholar 

  31. R.W. Munn, J. Phys. C, Solid State Phys. 8, 2721–2728 (1975)

    Article  ADS  Google Scholar 

  32. C.T. Black, J.J. Welser, IEEE Trans. Electron Devices 46(4), 776–780 (1999)

    Article  ADS  Google Scholar 

  33. J.C. Slater, Phys. Rev. 78, 748–761 (1950)

    Article  ADS  MATH  Google Scholar 

  34. R.A. Parker, Phys. Rev. 124, 1713–1719 (1961)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, 15213, USA

    Mohammad Noman & James A. Bain

  2. Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, 15213, USA

    Wenkan Jiang, Paul A. Salvador & Marek Skowronski

Authors
  1. Mohammad Noman
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Wenkan Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Paul A. Salvador
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Marek Skowronski
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. James A. Bain
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Mohammad Noman.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Noman, M., Jiang, W., Salvador, P.A. et al. Computational investigations into the operating window for memristive devices based on homogeneous ionic motion. Appl. Phys. A 102, 877–883 (2011). https://doi.org/10.1007/s00339-011-6270-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-011-6270-y

Keywords

Search

Navigation