Abstract
Resistive switching behaviors are described in silicon oxide (SiO x ) systems employing vertical E/SiO x /E (E denotes the electrode) structures. The switching is largely independent of the electrode material and attributed to the intrinsic properties of SiO x . Based on the recent experimental observation (Yao et al. in Nano Lett. 10:4105, 2010) of a silicon filament embedded in the SiO x matrix, we further discuss the switching mechanism in light of the measured electrical phenomena. The set voltages are largely SiO x -thickness independent, consistent with the mechanistic picture of point switching in the silicon filament. The multi-state switching and shifts in the set voltages with respect to the reset voltages are consistent with an electrochemical redox process (Si ↔ SiO y ) at the switching site.
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Yao, J., Zhong, L., Natelson, D. et al. Intrinsic resistive switching and memory effects in silicon oxide. Appl. Phys. A 102, 835–839 (2011). https://doi.org/10.1007/s00339-011-6267-6
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DOI: https://doi.org/10.1007/s00339-011-6267-6