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Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells

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Abstract

The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In, Ga)(S, Se)2 alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In, Ga)(S, Se)2 thin-films.

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  1. IEF5-Photovoltaik, Forschungszentrum Jülich, 52425, Jülich, Germany

    Uwe Rau

  2. Dto. de Electrotecnia, Universidad Nacional del Comahue, Buenos Aires, 1400, Neuquén, Argentina

    Kurt Taretto

  3. Université du Luxembourg, 162a, avenue de la Faïencerie, 1511, Luxembourg, Luxembourg

    Susanne Siebentritt

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  1. Uwe Rau
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Rau, U., Taretto, K. & Siebentritt, S. Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells. Appl. Phys. A 96, 221–234 (2009). https://doi.org/10.1007/s00339-008-4978-0

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