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Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges

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Abstract.

The recent achievements of high-efficiency Cu(In,Ga)Se2 heterojunction solar cells are reviewed with a special focus on the understanding of the electronic transport properties of the devices. We discuss the basic limitations of the device performance, the present understanding of electronic device analysis, as well as the role of intrinsic defects and of the interfaces for the performance of the solar cells.

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Authors and Affiliations

  1. Institut für Physikalische Elektronik (IPE), Universität Stuttgart, Pfaffenwaldring 47, D-70569, Stuttgart, Germany (E-mail: uwe.rau@ipe.uni-stuttgart.de), , , , , , DE

    U. Rau & H.W. Schock

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  1. U. Rau
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  2. H.W. Schock
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Received: 12 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999

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Rau, U., Schock, H. Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges. Appl Phys A 69, 131–147 (1999). https://doi.org/10.1007/s003390050984

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  • DOI: https://doi.org/10.1007/s003390050984

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