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Role of defects in resistive switching dynamics of memristors

  • Early Career Materials Researcher Prospective
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Abstract

Resistive-switching memristors are promising device structures for future memory and neuromorphic computing applications. Defects are shown to be critical for the conducting filament formation, and resulting device performance metrics of memristors. In this prospective article, we investigate the role of defects in the resistive-switching dynamics of filamentary-type memristors, and explore defect-engineering as an effective method to rationally design controllable conduction pathways. Specifically, we propose a data-centric approach that combines the defect-knowledge obtained from first-principles calculations with the materials engineering and characterization efforts.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

A.M.K. acknowledges support from the School of Materials Engineering at Purdue University under Account Number F.10023800.05.002. G.T. acknowledges support from Wayne State University and NSF Grant CCF-2153177.

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  1. Electrical and Computer Engineering Department, Wayne State University, 5050 Anthony Wayne Drive, Detroit, MI, 48202, USA

    Gozde Tutuncuoglu

  2. School of Materials Engineering, Purdue University, 701 W Stadium Ave, West Lafayette, IN, 47907, USA

    Arun Mannodi-Kanakkithodi

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Tutuncuoglu, G., Mannodi-Kanakkithodi, A. Role of defects in resistive switching dynamics of memristors. MRS Communications 12, 531–542 (2022). https://doi.org/10.1557/s43579-022-00243-z

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