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Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films

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Abstract

Sol–gel techniques were used to prepare thin films of Pb(Zr x ,Ti1−x )O3 (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d 33 piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.

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Authors and Affiliations

  1. Department of Physics, Prince of Songkla University, Songkhla, Thailand

    S. Muensit, P. Sukwisut & P. Khaenamkeaw

  2. NANOTEC Center of Excellence at Prince of Songkhla University, Songkhla, Thailand

    S. Muensit

  3. Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer Sheva, Israel

    S. B. Lang

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  1. S. Muensit
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  2. P. Sukwisut
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  3. P. Khaenamkeaw
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  4. S. B. Lang
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Correspondence to S. Muensit.

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Muensit, S., Sukwisut, P., Khaenamkeaw, P. et al. Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films. Appl. Phys. A 92, 659–663 (2008). https://doi.org/10.1007/s00339-008-4602-3

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  • DOI: https://doi.org/10.1007/s00339-008-4602-3

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