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Effect of composition and light intensity on the electrical properties of Sn–Sb–Se glassy films

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Abstract

Electrical and photoelectrical measurements have been performed on SnxSb20Se70-x (8≤x≤16) glassy films. The dc activation energy, optical gap and photoconduction parameters show a typical variation near x=10 composition indicating the occurrence of a rigidity percolation threshold in the present system. The photosensitivity increases with the increase in Sn content up to x=14 and an abrupt decrease for x=16 composition. Negative photoconductivity region have been observed in the higher temperature side for samples with x=10 and 16. This system belongs to the type II category of photoconductors. The results are explained on the basis of a change in the density of localized states present in the mobility gap with the change in the composition.

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Authors and Affiliations

  1. Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India

    P. Kumar, J. Kumar, M. Ahmad & R. Thangaraj

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  1. P. Kumar
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  2. J. Kumar
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  3. M. Ahmad
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  4. R. Thangaraj
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Correspondence to R. Thangaraj.

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PACS

71.20.Nr; 72.20.-I; 78.66.Jg; 81.05.Gc; 73.50.Pz

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Kumar, P., Kumar, J., Ahmad, M. et al. Effect of composition and light intensity on the electrical properties of Sn–Sb–Se glassy films. Appl. Phys. A 90, 469–473 (2008). https://doi.org/10.1007/s00339-007-4305-1

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  • DOI: https://doi.org/10.1007/s00339-007-4305-1

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